We have studied the electrical activation of the Fe2+/3+ trap in Fe-implanted InP by means of capacitance-voltage and deep level transient spectroscopy analyses. Five deep traps have been identified and we have characterized the concentration and depth distribution of the Fe2+/3+ deep trap, located at E-C-0.66 eV. The InP substrate background doping, i.e., the Fermi-level position, plays a crucial role in the Fe activation process by setting an upper limit to the amount of Fe centers electrically activated as deep acceptor traps.
Fraboni, B., Gasparotto, A., Cesca, T., Verna, A., Impellizzeri, G., & Priolo, F. (2005). Electrical activation of the Fe2+/3+ trap in Fe-implanted InP. APPLIED PHYSICS LETTERS, 87, 252113-1-252113-3 [10.1063/1.2150281].