We have investigated the integration of Ge p-i-n and n-i-p heterojunction photodiodes on Si. Recognizing the crucial role of interface defects at the Ge/Si interface on the performance of photodetectors, we have designed and fabricated high-performance n-i-p Ge photodiodes on p(+)-Si substrates. These photodiodes exhibit short-circuit responsivities of 0.3 and 0.2 A/W at 1.3 and 1.55 mum, respectively, reverse dark currents of 20 mA/cm(2) and response times of 800 ps.

Masini G, Colace L, Assanto G, Luan HC, & Kimerling LC (2001). High-performance p-i-n Ge on Si photodetectors for the near infrared: From model to demonstration. IEEE TRANSACTIONS ON ELECTRON DEVICES, 48(6), 1092-1096.

High-performance p-i-n Ge on Si photodetectors for the near infrared: From model to demonstration

COLACE, Lorenzo;;
2001

Abstract

We have investigated the integration of Ge p-i-n and n-i-p heterojunction photodiodes on Si. Recognizing the crucial role of interface defects at the Ge/Si interface on the performance of photodetectors, we have designed and fabricated high-performance n-i-p Ge photodiodes on p(+)-Si substrates. These photodiodes exhibit short-circuit responsivities of 0.3 and 0.2 A/W at 1.3 and 1.55 mum, respectively, reverse dark currents of 20 mA/cm(2) and response times of 800 ps.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11590/134340
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? 96
social impact