We have investigated the integration of Ge p-i-n and n-i-p heterojunction photodiodes on Si. Recognizing the crucial role of interface defects at the Ge/Si interface on the performance of photodetectors, we have designed and fabricated high-performance n-i-p Ge photodiodes on p(+)-Si substrates. These photodiodes exhibit short-circuit responsivities of 0.3 and 0.2 A/W at 1.3 and 1.55 mum, respectively, reverse dark currents of 20 mA/cm(2) and response times of 800 ps.

Masini, G., Colace, L., Assanto, G., Luan, H.c., Kimerling, L.c. (2001). High-performance p-i-n Ge on Si photodetectors for the near infrared: From model to demonstration. IEEE TRANSACTIONS ON ELECTRON DEVICES, 48(6), 1092-1096.

High-performance p-i-n Ge on Si photodetectors for the near infrared: From model to demonstration

COLACE, Lorenzo;ASSANTO, GAETANO;
2001-01-01

Abstract

We have investigated the integration of Ge p-i-n and n-i-p heterojunction photodiodes on Si. Recognizing the crucial role of interface defects at the Ge/Si interface on the performance of photodetectors, we have designed and fabricated high-performance n-i-p Ge photodiodes on p(+)-Si substrates. These photodiodes exhibit short-circuit responsivities of 0.3 and 0.2 A/W at 1.3 and 1.55 mum, respectively, reverse dark currents of 20 mA/cm(2) and response times of 800 ps.
2001
Masini, G., Colace, L., Assanto, G., Luan, H.c., Kimerling, L.c. (2001). High-performance p-i-n Ge on Si photodetectors for the near infrared: From model to demonstration. IEEE TRANSACTIONS ON ELECTRON DEVICES, 48(6), 1092-1096.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/134340
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