We have investigated the integration of Ge p-i-n and n-i-p heterojunction photodiodes on Si. Recognizing the crucial role of interface defects at the Ge/Si interface on the performance of photodetectors, we have designed and fabricated high-performance n-i-p Ge photodiodes on p(+)-Si substrates. These photodiodes exhibit short-circuit responsivities of 0.3 and 0.2 A/W at 1.3 and 1.55 mum, respectively, reverse dark currents of 20 mA/cm(2) and response times of 800 ps.
Masini G, Colace L, Assanto G, Luan HC, & Kimerling LC (2001). High-performance p-i-n Ge on Si photodetectors for the near infrared: From model to demonstration. IEEE TRANSACTIONS ON ELECTRON DEVICES, 48(6), 1092-1096.
Titolo: | High-performance p-i-n Ge on Si photodetectors for the near infrared: From model to demonstration | |
Autori: | ||
Data di pubblicazione: | 2001 | |
Rivista: | ||
Citazione: | Masini G, Colace L, Assanto G, Luan HC, & Kimerling LC (2001). High-performance p-i-n Ge on Si photodetectors for the near infrared: From model to demonstration. IEEE TRANSACTIONS ON ELECTRON DEVICES, 48(6), 1092-1096. | |
Abstract: | We have investigated the integration of Ge p-i-n and n-i-p heterojunction photodiodes on Si. Recognizing the crucial role of interface defects at the Ge/Si interface on the performance of photodetectors, we have designed and fabricated high-performance n-i-p Ge photodiodes on p(+)-Si substrates. These photodiodes exhibit short-circuit responsivities of 0.3 and 0.2 A/W at 1.3 and 1.55 mum, respectively, reverse dark currents of 20 mA/cm(2) and response times of 800 ps. | |
Handle: | http://hdl.handle.net/11590/134340 | |
Appare nelle tipologie: | 1.1 Articolo in rivista |