Benvenuti nell'Anagrafe della Ricerca d'Ateneo
La valutazione delle attività di ricerca che si svolgono nelle università ha assunto un'importanza rilevante sia per l'intero sistema universitario sia all'interno di ogni singolo ateneo. Roma Tre si è quindi dotata di idonei strumenti informativi in grado di supportare al meglio le azioni di monitoraggio e di valutazione delle attività di ricerca svolte nei propri dipartimentied ha realizzato una Anagrafe della Ricerca di Ateneo.
EnglishWe demonstrate Ge/Si heterojunction photodetectors based on high quality epitaxial germanium grown on silicon. Germanium deposited by ultra-high-vacuum chemical vapor deposition (UHV-CVD) undergoes thermal annealing cycles which reduce the number of dislocations and, thus, improve the overall quality. The photodetectors exhibit record responsivity of 0.55 A/W and a sub-ns photoresponse at 1.3 mum. We describe the fabrication process as well as a complete optoelectronic characterization of the devices. (C) 2001 Elsevier Science B.V. All rights reserved.
Luan HC, Wada K, Kimerling LC, Masini G, Colace L, & Assanto G (2001). High efficiency photodetectors based on high quality epitaxial germanium grown on silicon substrates. OPTICAL MATERIALS, 17(1-2), 71-73.
| Titolo: | High efficiency photodetectors based on high quality epitaxial germanium grown on silicon substrates | |
| Autori: | ||
| Data di pubblicazione: | 2001 | |
| Rivista: | ||
| Citazione: | Luan HC, Wada K, Kimerling LC, Masini G, Colace L, & Assanto G (2001). High efficiency photodetectors based on high quality epitaxial germanium grown on silicon substrates. OPTICAL MATERIALS, 17(1-2), 71-73. | |
| Abstract: | We demonstrate Ge/Si heterojunction photodetectors based on high quality epitaxial germanium grown on silicon. Germanium deposited by ultra-high-vacuum chemical vapor deposition (UHV-CVD) undergoes thermal annealing cycles which reduce the number of dislocations and, thus, improve the overall quality. The photodetectors exhibit record responsivity of 0.55 A/W and a sub-ns photoresponse at 1.3 mum. We describe the fabrication process as well as a complete optoelectronic characterization of the devices. (C) 2001 Elsevier Science B.V. All rights reserved. | |
| Handle: | http://hdl.handle.net/11590/134341 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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