In this letter we report on a metal-semiconductor-metal photodetector based on thick relaxed Ge layers, epitaxially grown on silicon after insertion of a low-temperature-grown Ge buffer layer. The detector shows a good responsivity at normal incidence at both 1.3 and 1.55 mu m, with a maximum responsivity of 0.24 A/W at 1.3 mu m under a 1 V bias. A response time of about 2 ns has been measured. (C) 1998 American Institute of Physics.

Colace, L., Masini, G., Galluzzi, F., Assanto, G., Capellini, G., Di Gaspare, L., et al. (1998). Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si. APPLIED PHYSICS LETTERS, 72(24), 3175-3177 [10.1063/1.121584].

Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si

COLACE, Lorenzo;ASSANTO, GAETANO;
1998-01-01

Abstract

In this letter we report on a metal-semiconductor-metal photodetector based on thick relaxed Ge layers, epitaxially grown on silicon after insertion of a low-temperature-grown Ge buffer layer. The detector shows a good responsivity at normal incidence at both 1.3 and 1.55 mu m, with a maximum responsivity of 0.24 A/W at 1.3 mu m under a 1 V bias. A response time of about 2 ns has been measured. (C) 1998 American Institute of Physics.
Colace, L., Masini, G., Galluzzi, F., Assanto, G., Capellini, G., Di Gaspare, L., et al. (1998). Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si. APPLIED PHYSICS LETTERS, 72(24), 3175-3177 [10.1063/1.121584].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/134343
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