In this letter we report on a metal-semiconductor-metal photodetector based on thick relaxed Ge layers, epitaxially grown on silicon after insertion of a low-temperature-grown Ge buffer layer. The detector shows a good responsivity at normal incidence at both 1.3 and 1.55 mu m, with a maximum responsivity of 0.24 A/W at 1.3 mu m under a 1 V bias. A response time of about 2 ns has been measured. (C) 1998 American Institute of Physics.
Colace L, Masini G, Galluzzi F, Assanto G, Capellini G, Di Gaspare L, et al. (1998). Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si. APPLIED PHYSICS LETTERS, 72(24), 3175-3177.
Titolo: | Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si |
Autori: | |
Data di pubblicazione: | 1998 |
Rivista: | |
Citazione: | Colace L, Masini G, Galluzzi F, Assanto G, Capellini G, Di Gaspare L, et al. (1998). Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si. APPLIED PHYSICS LETTERS, 72(24), 3175-3177. |
Abstract: | In this letter we report on a metal-semiconductor-metal photodetector based on thick relaxed Ge layers, epitaxially grown on silicon after insertion of a low-temperature-grown Ge buffer layer. The detector shows a good responsivity at normal incidence at both 1.3 and 1.55 mu m, with a maximum responsivity of 0.24 A/W at 1.3 mu m under a 1 V bias. A response time of about 2 ns has been measured. (C) 1998 American Institute of Physics. |
Handle: | http://hdl.handle.net/11590/134343 |
Appare nelle tipologie: | 1.1 Articolo in rivista |