The paper presents a large-signal nonlinear circuit-oriented model for polycrystalline and single-crystal H-terminated diamond MESFETs implemented within the Agilent ADS design suite. The DC characteristics of such devices suggest that the channel free charge control law may be modeled using the same strategy adopted for III-V HEMTs. For this reason, the well-known nonlinear Chalmers (Angelov) circuit model was chosen as the starting point for the development of the present non-linear diamond MESFET model. Model fitting was performed against DC and multibias small signal measurements, with good agreement. Model validations versus large-signal (power) measurements point out the accuracy of the proposed approach to simulate the behavior of H-terminated diamond MESFETs under large-signal operation.

V., C., F., C., G., G., M., P., Conte, G., B., P., et al. (2012). Accurate large-signal equivalent circuit of surface channel diamond FETs based on the Chalmers model. DIAMOND AND RELATED MATERIALS, 26, 15-19 [10.1016/j.diamond.2012.03.010].

Accurate large-signal equivalent circuit of surface channel diamond FETs based on the Chalmers model

CONTE, Gennaro;
2012

Abstract

The paper presents a large-signal nonlinear circuit-oriented model for polycrystalline and single-crystal H-terminated diamond MESFETs implemented within the Agilent ADS design suite. The DC characteristics of such devices suggest that the channel free charge control law may be modeled using the same strategy adopted for III-V HEMTs. For this reason, the well-known nonlinear Chalmers (Angelov) circuit model was chosen as the starting point for the development of the present non-linear diamond MESFET model. Model fitting was performed against DC and multibias small signal measurements, with good agreement. Model validations versus large-signal (power) measurements point out the accuracy of the proposed approach to simulate the behavior of H-terminated diamond MESFETs under large-signal operation.
V., C., F., C., G., G., M., P., Conte, G., B., P., et al. (2012). Accurate large-signal equivalent circuit of surface channel diamond FETs based on the Chalmers model. DIAMOND AND RELATED MATERIALS, 26, 15-19 [10.1016/j.diamond.2012.03.010].
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/134907
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 9
  • ???jsp.display-item.citation.isi??? 9
social impact