We study the effect of the substrate on the effective surface impedance of a YBa2Cu3O7-delta thin film grown over a silicon substrate. The microwave measurements, performed with a resonant cavity technique at two distinct frequencies (24 and 48 GHz), show anomalies both in the temperature and in the frequency dependences. By properly taking into account a relevant complex substrate contribution, with an important role played by the finite thickness effect, the whole set of data finds a satisfactory explanation in terms of standard impedance transformations. Using independent measurements at a single temperature, it is possible to extract the temperature dependence of the YBa2Cu3O7-delta bulk surface impedance, which shows the expected frequency and temperature behaviours.

Pompeo, N., Marcon, R., Mechin, L., Silva, E. (2005). Effective surface impedance of YBa2CU3O7-delta films on silicon substrates RID B-6088-2008. SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 18(4), 531-537 [10.1088/0953-2048/18/4/025].

Effective surface impedance of YBa2CU3O7-delta films on silicon substrates RID B-6088-2008

POMPEO, NICOLA;SILVA, Enrico
2005-01-01

Abstract

We study the effect of the substrate on the effective surface impedance of a YBa2Cu3O7-delta thin film grown over a silicon substrate. The microwave measurements, performed with a resonant cavity technique at two distinct frequencies (24 and 48 GHz), show anomalies both in the temperature and in the frequency dependences. By properly taking into account a relevant complex substrate contribution, with an important role played by the finite thickness effect, the whole set of data finds a satisfactory explanation in terms of standard impedance transformations. Using independent measurements at a single temperature, it is possible to extract the temperature dependence of the YBa2Cu3O7-delta bulk surface impedance, which shows the expected frequency and temperature behaviours.
Pompeo, N., Marcon, R., Mechin, L., Silva, E. (2005). Effective surface impedance of YBa2CU3O7-delta films on silicon substrates RID B-6088-2008. SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 18(4), 531-537 [10.1088/0953-2048/18/4/025].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/135207
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