Benvenuti nell'Anagrafe della Ricerca d'Ateneo
La valutazione delle attività di ricerca che si svolgono nelle università ha assunto un'importanza rilevante sia per l'intero sistema universitario sia all'interno di ogni singolo ateneo. Roma Tre si è quindi dotata di idonei strumenti informativi in grado di supportare al meglio le azioni di monitoraggio e di valutazione delle attività di ricerca svolte nei propri dipartimentied ha realizzato una Anagrafe della Ricerca di Ateneo.
EnglishThe optoelectronic properties of ultrananocrystalline diamond films (UNCD) grown using N2=0 and 5% in the deposition gas mixture, are investigated by transient photocurrent measurements under nanosecond light pulses, both in planar and sandwich contact arrangements. Independent of contact configuration and N2% value, very similar characteristic times in the 6-7 ns range are detected in the nanosecond range, reflecting a homogeneous distribution of states responsible for such decay times. On a longer time scale, nitrogen addition appears to slow down carrier transport promoting trapping and detrapping processes responsible for single and two power law photocurrent decays in films deposited using N2=5% for sandwich and planar contact arrangements, respectively. Such a result suggests a nitrogen induced transport anisotropy tentatively related to structural modifications occurring at relatively low N2%.
Rossi, M.C., A., M., S., C., P., C., Conte, G., & V., R. (2010). Charge carrier transport anisotropy in ultrananocrystalline diamond films. DIAMOND AND RELATED MATERIALS, 19, 238-241.
| Titolo: | Charge carrier transport anisotropy in ultrananocrystalline diamond films |
| Autori: | |
| Data di pubblicazione: | 2010 |
| Rivista: | |
| Citazione: | Rossi, M.C., A., M., S., C., P., C., Conte, G., & V., R. (2010). Charge carrier transport anisotropy in ultrananocrystalline diamond films. DIAMOND AND RELATED MATERIALS, 19, 238-241. |
| Abstract: | The optoelectronic properties of ultrananocrystalline diamond films (UNCD) grown using N2=0 and 5% in the deposition gas mixture, are investigated by transient photocurrent measurements under nanosecond light pulses, both in planar and sandwich contact arrangements. Independent of contact configuration and N2% value, very similar characteristic times in the 6-7 ns range are detected in the nanosecond range, reflecting a homogeneous distribution of states responsible for such decay times. On a longer time scale, nitrogen addition appears to slow down carrier transport promoting trapping and detrapping processes responsible for single and two power law photocurrent decays in films deposited using N2=5% for sandwich and planar contact arrangements, respectively. Such a result suggests a nitrogen induced transport anisotropy tentatively related to structural modifications occurring at relatively low N2%. |
| Handle: | http://hdl.handle.net/11590/136996 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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