A method of controlled diamond doping, consisting in introducing a solid-state silicon source into aCVDreactor chamber is proposed and implemented. Such an approach is tested during diamond lm and isolated nanocrystallite growth on silicon, molybdenum, sapphire, copper, and quartz substrates. The approach to nanodiamond doping with silicon during CVD synthesis, developed in this paper, is promising for developing stable highly ecient luminescent nanodiamonds.

Sedov, V.S., Vlasov, I.I., Ralchenko, V.G., Khomich, A.A., Konov, V.I., Fabbri, A.G., et al. (2011). Gas-Phase Growth of Silicon-Doped Luminescent Diamond Films and Isolated Nanocrystals. BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 38, 291-296 [10.3103/S1068335611100010].

Gas-Phase Growth of Silicon-Doped Luminescent Diamond Films and Isolated Nanocrystals

A. G. Fabbri;CONTE, Gennaro
2011-01-01

Abstract

A method of controlled diamond doping, consisting in introducing a solid-state silicon source into aCVDreactor chamber is proposed and implemented. Such an approach is tested during diamond lm and isolated nanocrystallite growth on silicon, molybdenum, sapphire, copper, and quartz substrates. The approach to nanodiamond doping with silicon during CVD synthesis, developed in this paper, is promising for developing stable highly ecient luminescent nanodiamonds.
2011
Sedov, V.S., Vlasov, I.I., Ralchenko, V.G., Khomich, A.A., Konov, V.I., Fabbri, A.G., et al. (2011). Gas-Phase Growth of Silicon-Doped Luminescent Diamond Films and Isolated Nanocrystals. BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 38, 291-296 [10.3103/S1068335611100010].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/137087
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