Benvenuti nell'Anagrafe della Ricerca d'Ateneo
La valutazione delle attività di ricerca che si svolgono nelle università ha assunto un'importanza rilevante sia per l'intero sistema universitario sia all'interno di ogni singolo ateneo. Roma Tre si è quindi dotata di idonei strumenti informativi in grado di supportare al meglio le azioni di monitoraggio e di valutazione delle attività di ricerca svolte nei propri dipartimentied ha realizzato una Anagrafe della Ricerca di Ateneo.
EnglishLuminescence properties of silicon-related centers in CVD-grown diamond films and their spatial distribution along the growth direction have been investigated. It is found that the lineshape and peak position of the emission band depend both on excitation energy and light focalization depth, suggesting the coexistence of two optical centers related to isolated vacancies and to silicon-vacancy complexes. A simple model of the electronic structure of this defect is proposed. (C) 1997 Elsevier Science S.A.
Rossi MC, Salvatori S, Galluzzi F, Montereali RM, & Somma Anfosso F (1997). Emission and excitation spectra of silicon-related luminescent centers in CVD-grown diamond films. DIAMOND AND RELATED MATERIALS, 6(10), 1564-1567.
| Titolo: | Emission and excitation spectra of silicon-related luminescent centers in CVD-grown diamond films |
| Autori: | |
| Data di pubblicazione: | 1997 |
| Rivista: | |
| Citazione: | Rossi MC, Salvatori S, Galluzzi F, Montereali RM, & Somma Anfosso F (1997). Emission and excitation spectra of silicon-related luminescent centers in CVD-grown diamond films. DIAMOND AND RELATED MATERIALS, 6(10), 1564-1567. |
| Abstract: | Luminescence properties of silicon-related centers in CVD-grown diamond films and their spatial distribution along the growth direction have been investigated. It is found that the lineshape and peak position of the emission band depend both on excitation energy and light focalization depth, suggesting the coexistence of two optical centers related to isolated vacancies and to silicon-vacancy complexes. A simple model of the electronic structure of this defect is proposed. (C) 1997 Elsevier Science S.A. |
| Handle: | http://hdl.handle.net/11590/137588 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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