Luminescence properties of silicon-related centers in CVD-grown diamond films and their spatial distribution along the growth direction have been investigated. It is found that the lineshape and peak position of the emission band depend both on excitation energy and light focalization depth, suggesting the coexistence of two optical centers related to isolated vacancies and to silicon-vacancy complexes. A simple model of the electronic structure of this defect is proposed. (C) 1997 Elsevier Science S.A.
Rossi, M.C., Galluzzi, F., Montereali, R.m., Somma, F., Salvatori, S. (1997). Emission and excitation spectra of silicon-related luminescent centers in CVD-grown diamond films. DIAMOND AND RELATED MATERIALS, 6(10), 1564-1567 [10.1016/S0925-9635(97)00058-7].
Emission and excitation spectra of silicon-related luminescent centers in CVD-grown diamond films
ROSSI, Maria Cristina;SOMMA, Fabrizia;
1997-01-01
Abstract
Luminescence properties of silicon-related centers in CVD-grown diamond films and their spatial distribution along the growth direction have been investigated. It is found that the lineshape and peak position of the emission band depend both on excitation energy and light focalization depth, suggesting the coexistence of two optical centers related to isolated vacancies and to silicon-vacancy complexes. A simple model of the electronic structure of this defect is proposed. (C) 1997 Elsevier Science S.A.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
