A structural investigation of the (1X1)-Bi/GaAs(110) interface by grazing-incidence x-ray diffraction is presented. The (1X1) structure has been prepared by depositing 1 ML of bismuth at room temperature on a GaAs(110) substrate grown by molecular-beam epitaxy. The structural model for the (1X1) symmetry chemisorption of Bi and the in-plane structural parameters are obtained and compared with previous experimental results. We find that the epitaxial geometry corresponds to a shifted epitaxial continued layer structure (ECLS), contrary to the almost perfect ECLS geometry of the Sb/GaAs(110) interface. We determine a 2.85-Angstrom Bi-Bi bonding length, lower than the bulk Bi value of 3.1 Angstrom, and consistent with the presence of a compression of the Bi atoms within the overlayer.
Ruocco, A., Jedrecy, N., Pinchaux, R., Sauvagesimkin, M., Waldhauer, A., Betti, M.g., et al. (1994). STRUCTURAL-ANALYSIS OF THE (1X1)-BI/GAAS(110) INTERFACE. PHYSICAL REVIEW. B, CONDENSED MATTER, 50(11), 8004-8007 [10.1103/PhysRevB.50.8004].
STRUCTURAL-ANALYSIS OF THE (1X1)-BI/GAAS(110) INTERFACE
RUOCCO, Alessandro;
1994-01-01
Abstract
A structural investigation of the (1X1)-Bi/GaAs(110) interface by grazing-incidence x-ray diffraction is presented. The (1X1) structure has been prepared by depositing 1 ML of bismuth at room temperature on a GaAs(110) substrate grown by molecular-beam epitaxy. The structural model for the (1X1) symmetry chemisorption of Bi and the in-plane structural parameters are obtained and compared with previous experimental results. We find that the epitaxial geometry corresponds to a shifted epitaxial continued layer structure (ECLS), contrary to the almost perfect ECLS geometry of the Sb/GaAs(110) interface. We determine a 2.85-Angstrom Bi-Bi bonding length, lower than the bulk Bi value of 3.1 Angstrom, and consistent with the presence of a compression of the Bi atoms within the overlayer.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
