The H:GaP(110) system was studied by EELS and AES. H induced losses were found in the 8, 12 and 18 eV region respectively. The PL2,3 Auger lineshape was recorded as a function of emitted electron take-off angle. This method was proven to be able to identify structures in the electronic density of states at the surface both in the clean and H exposed surface. Two H induced states. located at about 2 and 4.5 eV below the valence band respectively, have been singled out.
GAMBACORTI N, IACOBUCCI S, PAOLICELLI G, PANACCIONE G, RUOCCO A, & NANNARONE S (1992). ELECTRONIC-STRUCTURE OF H-GAP(110). SURFACE SCIENCE, 269, 823-828 [10.1016/0039-6028(92)91355-F].
Titolo: | ELECTRONIC-STRUCTURE OF H-GAP(110) | |
Autori: | ||
Data di pubblicazione: | 1992 | |
Rivista: | ||
Citazione: | GAMBACORTI N, IACOBUCCI S, PAOLICELLI G, PANACCIONE G, RUOCCO A, & NANNARONE S (1992). ELECTRONIC-STRUCTURE OF H-GAP(110). SURFACE SCIENCE, 269, 823-828 [10.1016/0039-6028(92)91355-F]. | |
Abstract: | The H:GaP(110) system was studied by EELS and AES. H induced losses were found in the 8, 12 and 18 eV region respectively. The PL2,3 Auger lineshape was recorded as a function of emitted electron take-off angle. This method was proven to be able to identify structures in the electronic density of states at the surface both in the clean and H exposed surface. Two H induced states. located at about 2 and 4.5 eV below the valence band respectively, have been singled out. | |
Handle: | http://hdl.handle.net/11590/141021 | |
Appare nelle tipologie: | 1.1 Articolo in rivista |