The H:GaP(110) system was studied by EELS and AES. H induced losses were found in the 8, 12 and 18 eV region respectively. The PL2,3 Auger lineshape was recorded as a function of emitted electron take-off angle. This method was proven to be able to identify structures in the electronic density of states at the surface both in the clean and H exposed surface. Two H induced states. located at about 2 and 4.5 eV below the valence band respectively, have been singled out.

Gambacorti, N., Iacobucci, S., Paolicelli, G., Panaccione, G., Ruocco, A., Nannarone, S. (1992). ELECTRONIC-STRUCTURE OF H-GAP(110). SURFACE SCIENCE, 269, 823-828 [10.1016/0039-6028(92)91355-F].

ELECTRONIC-STRUCTURE OF H-GAP(110)

RUOCCO, Alessandro;
1992-01-01

Abstract

The H:GaP(110) system was studied by EELS and AES. H induced losses were found in the 8, 12 and 18 eV region respectively. The PL2,3 Auger lineshape was recorded as a function of emitted electron take-off angle. This method was proven to be able to identify structures in the electronic density of states at the surface both in the clean and H exposed surface. Two H induced states. located at about 2 and 4.5 eV below the valence band respectively, have been singled out.
1992
Gambacorti, N., Iacobucci, S., Paolicelli, G., Panaccione, G., Ruocco, A., Nannarone, S. (1992). ELECTRONIC-STRUCTURE OF H-GAP(110). SURFACE SCIENCE, 269, 823-828 [10.1016/0039-6028(92)91355-F].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/141021
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