Germanium is considered the most suitable semiconductor for monolithic integration of near-infrared detectors on silicon photonic chips. Here we report on Ge-on-Si near-infrared photodetectors fabricated by thermal evaporation, demonstrating the use of phosphorus spin-on-dopant to compensate the acceptor states introduced by dislocations. The detectors exhibit 1.55 mu m responsivities as high as 0.1 A/W, more than two orders of magnitude larger than in undoped devices and comparing well with state-of-the-art p-i-n photodiodes. This approach enables simple and low-cost monolithic integration of near-infrared sensors with silicon photonics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747213]

Sorianello, V., De Iacovo, A., Colace, L., Fabbri, A., Tortora, L., Buffagni, E., et al. (2012). High responsivity near-infrared photodetectors in evaporated Ge-on-Si. APPLIED PHYSICS LETTERS, 101(8), 081101-081104 [10.1063/1.4747213].

High responsivity near-infrared photodetectors in evaporated Ge-on-Si

SORIANELLO, VITO;DE IACOVO, ANDREA;COLACE, Lorenzo;Fabbri, A;TORTORA, LUCA;ASSANTO, GAETANO
2012

Abstract

Germanium is considered the most suitable semiconductor for monolithic integration of near-infrared detectors on silicon photonic chips. Here we report on Ge-on-Si near-infrared photodetectors fabricated by thermal evaporation, demonstrating the use of phosphorus spin-on-dopant to compensate the acceptor states introduced by dislocations. The detectors exhibit 1.55 mu m responsivities as high as 0.1 A/W, more than two orders of magnitude larger than in undoped devices and comparing well with state-of-the-art p-i-n photodiodes. This approach enables simple and low-cost monolithic integration of near-infrared sensors with silicon photonics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747213]
Sorianello, V., De Iacovo, A., Colace, L., Fabbri, A., Tortora, L., Buffagni, E., et al. (2012). High responsivity near-infrared photodetectors in evaporated Ge-on-Si. APPLIED PHYSICS LETTERS, 101(8), 081101-081104 [10.1063/1.4747213].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11590/141744
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