Polycrystalline NaF films were grown by e-beam assisted physical evaporation on amorphous silica substrates kept, during film growth, at constant temperatures ranging from 40 degrees C to 400 degrees C. The structural characterization of the films was performed by X-ray diffraction and by scanning electron microscopy. Irradiating the films with a 15 keV electron beam induced the formation of F and F-aggregate colour centres stable at room temperature. Absorption and photoemission measurements were performed and indicated a dependence of coloration on the deposition conditions.

Cremona, M., Sotero, A.p., Nunes, R.a., Mauricio, M., Docarmo, L., Montereali, R.m., et al. (1995). NaF films: Growth properties and electron beam induced defects. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 136(1-4), 163-167 [10.1080/10420159508218814].

NaF films: Growth properties and electron beam induced defects

SOMMA, Fabrizia
1995

Abstract

Polycrystalline NaF films were grown by e-beam assisted physical evaporation on amorphous silica substrates kept, during film growth, at constant temperatures ranging from 40 degrees C to 400 degrees C. The structural characterization of the films was performed by X-ray diffraction and by scanning electron microscopy. Irradiating the films with a 15 keV electron beam induced the formation of F and F-aggregate colour centres stable at room temperature. Absorption and photoemission measurements were performed and indicated a dependence of coloration on the deposition conditions.
Cremona, M., Sotero, A.p., Nunes, R.a., Mauricio, M., Docarmo, L., Montereali, R.m., et al. (1995). NaF films: Growth properties and electron beam induced defects. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 136(1-4), 163-167 [10.1080/10420159508218814].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/143539
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