Designing, understanding and controlling the properties of engineered and functional materials, based on oxides and buried interfaces, is one of the most flourishing research fields and one of the major challenges faced by contemporary solid state science and technology. Often, a reliable spectroscopic analysis of such systems is hindered by surface effects, as structural distortion, stoichiometry changes, strong reactivity to external agent and major atomic and/or electronic reconstruction to name but a few. Hard X-Ray PhotoEmission Spectroscopy (HAXPES) is a powerful technique to overcome such limitations, allowing to monitor truly bulk sensitive properties. We report selected HAXPES results for manganese-based oxides, both in films and crystal forms, and for buried metal-organic interfaces, with the aim of highlighting some of the important features such technique brings in the analysis of electronic properties of the solids. (C) 2013 Elsevier B.V. All rights reserved.
Borgatti, F., Offi, F., Torelli, P., Monaco, G., Panaccione, G. (2013). Interfacial and bulk electronic properties of complex oxides and buried interfaces probed by HAXPES. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 190, 228-234 [10.1016/j.elspec.2013.01.002].
Interfacial and bulk electronic properties of complex oxides and buried interfaces probed by HAXPES
OFFI, FRANCESCO;
2013-01-01
Abstract
Designing, understanding and controlling the properties of engineered and functional materials, based on oxides and buried interfaces, is one of the most flourishing research fields and one of the major challenges faced by contemporary solid state science and technology. Often, a reliable spectroscopic analysis of such systems is hindered by surface effects, as structural distortion, stoichiometry changes, strong reactivity to external agent and major atomic and/or electronic reconstruction to name but a few. Hard X-Ray PhotoEmission Spectroscopy (HAXPES) is a powerful technique to overcome such limitations, allowing to monitor truly bulk sensitive properties. We report selected HAXPES results for manganese-based oxides, both in films and crystal forms, and for buried metal-organic interfaces, with the aim of highlighting some of the important features such technique brings in the analysis of electronic properties of the solids. (C) 2013 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
