FexAg100−x granular thin films, being 20<x<70, were prepared by pulsed laser deposition. The thermal evolution of the electric resistance shows a dramatic drop in the range of 200<T<300 K, completely reversible with temperature and associated to a current switching between the granular thin film and its Si substrate. High resolution transmission electron microscopy measurements have revealed an amorphous interface between the thin film and the substrate, and x-ray absorption spectroscopy studies have demonstrated an electronic localization associated to the Fe atoms in this interface, which is intrinsically responsible for the current switching.

J. ALONSO, M. L. FDEZ-GUBIEDA, G. SARMIENTO, J. M. BARANDIARÁN, A. SVALOV, I. ORUE, et al. (2009). Influence of the interface on the electronic channel switching of a Fe–Ag thin film on a Si substrate. APPLIED PHYSICS LETTERS, 95, 082103 [10.1063/1.3205124].

Influence of the interface on the electronic channel switching of a Fe–Ag thin film on a Si substrate

MENEGHINI, CARLO;
2009

Abstract

FexAg100−x granular thin films, being 20
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11590/146486
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