Benvenuti nell'Anagrafe della Ricerca d'Ateneo
La valutazione delle attività di ricerca che si svolgono nelle università ha assunto un'importanza rilevante sia per l'intero sistema universitario sia all'interno di ogni singolo ateneo. Roma Tre si è quindi dotata di idonei strumenti informativi in grado di supportare al meglio le azioni di monitoraggio e di valutazione delle attività di ricerca svolte nei propri dipartimentied ha realizzato una Anagrafe della Ricerca di Ateneo.
EnglishFexAg100−x granular thin films, being 20<x<70, were prepared by pulsed laser deposition. The thermal evolution of the electric resistance shows a dramatic drop in the range of 200<T<300 K, completely reversible with temperature and associated to a current switching between the granular thin film and its Si substrate. High resolution transmission electron microscopy measurements have revealed an amorphous interface between the thin film and the substrate, and x-ray absorption spectroscopy studies have demonstrated an electronic localization associated to the Fe atoms in this interface, which is intrinsically responsible for the current switching.
J. ALONSO, M. L. FDEZ-GUBIEDA, G. SARMIENTO, J. M. BARANDIARÁN, A. SVALOV, I. ORUE, et al. (2009). Influence of the interface on the electronic channel switching of a Fe–Ag thin film on a Si substrate. APPLIED PHYSICS LETTERS, 95, 082103 [10.1063/1.3205124].
| Titolo: | Influence of the interface on the electronic channel switching of a Fe–Ag thin film on a Si substrate | |
| Autori: | ||
| Data di pubblicazione: | 2009 | |
| Rivista: | ||
| Citazione: | J. ALONSO, M. L. FDEZ-GUBIEDA, G. SARMIENTO, J. M. BARANDIARÁN, A. SVALOV, I. ORUE, et al. (2009). Influence of the interface on the electronic channel switching of a Fe–Ag thin film on a Si substrate. APPLIED PHYSICS LETTERS, 95, 082103 [10.1063/1.3205124]. | |
| Abstract: | FexAg100−x granular thin films, being 20<x<70, were prepared by pulsed laser deposition. The thermal evolution of the electric resistance shows a dramatic drop in the range of 200<T<300 K, completely reversible with temperature and associated to a current switching between the granular thin film and its Si substrate. High resolution transmission electron microscopy measurements have revealed an amorphous interface between the thin film and the substrate, and x-ray absorption spectroscopy studies have demonstrated an electronic localization associated to the Fe atoms in this interface, which is intrinsically responsible for the current switching. | |
| Handle: | http://hdl.handle.net/11590/146486 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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