Near infrared photodetectors based on <100> silicon substrates

We report the fabrication of e cient near-infrared photodetectors based on polycrystalline Ge ® lms on Sih100i. In view of integration with Si electronics, metal± semiconductor± metal photodiodes have been realized, for the ® rst time to the best of our knowledge, by low-temperature evaporation. The experiments performed on non-optimized devices indicate a substantial sensitivity at both 1.32 and 1.55 mm, with a responsivity as high as 16mAW¡1 at 1.32 mm with 0.2 V bias, and a time response of about 4 ns.