In this paper we present structural and electrical investigations on high temperature Fe-implanted InP. The aim of the work is to relate the lattice position of the implanted atoms after annealing treatments (from 300 to 600 degrees C) with their electrical activation as compensating deep traps and to draw a comprehensive picture of the activation mechanisms. The overall results demonstrate that the electrical behavior and the Fe2+ deep trap activation properties are strictly connected to the annealing evolution of the implant-induced damage and to the escape process of the Fe atoms from substitutional sites, which in turn is controlled by the background doping density in the substrates.
|Titolo:||Mechanisms for the activation of ion-implanted Fe in InP|
|Data di pubblicazione:||2006|
|Citazione:||Cesca, T., Verna, A., Mattei, G., Gasparotto, A., Fraboni, B., Impellizzeri, G., et al. (2006). Mechanisms for the activation of ion-implanted Fe in InP. JOURNAL OF APPLIED PHYSICS, 100, 023539-1-023539-7.|
|Appare nelle tipologie:||1.1 Articolo in rivista|