GaAs-Alox waveguide structures for parametric processes are analyzed in detail.,The geometric tolerances of the structure are numerically calculated with reference to its parametric tuning. Finally, the tunability of GaAs-Alox based parametric devices versus temperature is investigated.
De Rossi, A., Berger, V., Leo, G., Assanto, G. (2005). Form birefringence phase matching in multilayer semiconductor waveguides: Tuning and tolerances. IEEE JOURNAL OF QUANTUM ELECTRONICS, 41(10), 1293-1302 [10.1109/JQE.2005.854133].
Form birefringence phase matching in multilayer semiconductor waveguides: Tuning and tolerances
ASSANTO, GAETANO
2005-01-01
Abstract
GaAs-Alox waveguide structures for parametric processes are analyzed in detail.,The geometric tolerances of the structure are numerically calculated with reference to its parametric tuning. Finally, the tunability of GaAs-Alox based parametric devices versus temperature is investigated.File in questo prodotto:
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