In recent years, several Ge-on-Si technologies for the fabrication of near infrared photodetectors on Si substrates were proposed. In particular, using a low temperature (300 degrees C) technique, we have demonstrated poly-Ge_on_Si detectors with high speed and good NIR responsivity. The low process temperature allows the monolithic integration of the detectors as a final step in the fabrication of Si CMOS integrated circuits. After an introduction on poly-Ge, we describe a novel integrated chip (NIRCAM-1) designed as a readout/control circuit for arrays of 64 (32) poly-Ge_on_Si photodetectors. The photodiodes, monolithically integrated (wire-bonded with a hybrid approach) on the IC, generate a photocurrent which is then ADC converted after subtraction of the dark component, thus allowing a convenient digital readout of the array. The extensive optoelectronic characterization of the IC is presented. (c) 2004 Elsevier B.V. All rights reserved.
Masini, G., Colace, L., Petulla, F., Assanto, G., Cencelli, V., Denotaristefani, F. (2005). Monolithic and hybrid near infrared detection and imaging based on poly-Ge photodiode arrays. OPTICAL MATERIALS, 27(5), 1079-1083 [10.1016/j.optmat.2004.08.069].
Monolithic and hybrid near infrared detection and imaging based on poly-Ge photodiode arrays
ASSANTO, GAETANO;
2005-01-01
Abstract
In recent years, several Ge-on-Si technologies for the fabrication of near infrared photodetectors on Si substrates were proposed. In particular, using a low temperature (300 degrees C) technique, we have demonstrated poly-Ge_on_Si detectors with high speed and good NIR responsivity. The low process temperature allows the monolithic integration of the detectors as a final step in the fabrication of Si CMOS integrated circuits. After an introduction on poly-Ge, we describe a novel integrated chip (NIRCAM-1) designed as a readout/control circuit for arrays of 64 (32) poly-Ge_on_Si photodetectors. The photodiodes, monolithically integrated (wire-bonded with a hybrid approach) on the IC, generate a photocurrent which is then ADC converted after subtraction of the dark component, thus allowing a convenient digital readout of the array. The extensive optoelectronic characterization of the IC is presented. (c) 2004 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.