We demonstrate near-infrared Ge-on-Si photodiodes designed to minimize the dark current density and fabricated by chemical vapor deposition. The p-i-n detectors exhibit record low dark currents of 7 nA at 1-V reverse bias with responsivities close to the theoretical maximum. An excellent performance is ascertained,even for very low reverse voltages.
Colace L, Ferrara P, Assanto G, Fulgoni D, & Nash L (2007). Low dark-current germanium-on-silicon near-infrared detectors. IEEE PHOTONICS TECHNOLOGY LETTERS, 19(21-24), 1813-1815.
Titolo: | Low dark-current germanium-on-silicon near-infrared detectors |
Autori: | |
Data di pubblicazione: | 2007 |
Rivista: | |
Citazione: | Colace L, Ferrara P, Assanto G, Fulgoni D, & Nash L (2007). Low dark-current germanium-on-silicon near-infrared detectors. IEEE PHOTONICS TECHNOLOGY LETTERS, 19(21-24), 1813-1815. |
Abstract: | We demonstrate near-infrared Ge-on-Si photodiodes designed to minimize the dark current density and fabricated by chemical vapor deposition. The p-i-n detectors exhibit record low dark currents of 7 nA at 1-V reverse bias with responsivities close to the theoretical maximum. An excellent performance is ascertained,even for very low reverse voltages. |
Handle: | http://hdl.handle.net/11590/149073 |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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