We demonstrate near-infrared Ge-on-Si photodiodes designed to minimize the dark current density and fabricated by chemical vapor deposition. The p-i-n detectors exhibit record low dark currents of 7 nA at 1-V reverse bias with responsivities close to the theoretical maximum. An excellent performance is ascertained,even for very low reverse voltages.

Colace, L., Ferrara, P., Assanto, G., Fulgoni, D., Nash, L. (2007). Low dark-current germanium-on-silicon near-infrared detectors. IEEE PHOTONICS TECHNOLOGY LETTERS, 19(21-24), 1813-1815 [10.1109/LPT.2007.907578].

Low dark-current germanium-on-silicon near-infrared detectors

ASSANTO, GAETANO;
2007

Abstract

We demonstrate near-infrared Ge-on-Si photodiodes designed to minimize the dark current density and fabricated by chemical vapor deposition. The p-i-n detectors exhibit record low dark currents of 7 nA at 1-V reverse bias with responsivities close to the theoretical maximum. An excellent performance is ascertained,even for very low reverse voltages.
Colace, L., Ferrara, P., Assanto, G., Fulgoni, D., Nash, L. (2007). Low dark-current germanium-on-silicon near-infrared detectors. IEEE PHOTONICS TECHNOLOGY LETTERS, 19(21-24), 1813-1815 [10.1109/LPT.2007.907578].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/149073
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