The authors demonstrate near infrared photodetectors in evaporated germanium on silicon-on-insulator waveguides. The authors achieve peak responsivities as high as 1 A/W and dark current densities as low as 40 nA at a reverse bias of 1 V. Owing to the low deposition temperature, this technology allows for simple and low cost monolithic integration with silicon. (C) 2007 American Institute of Physics.

Colace, L., Sorianello, V., Balbi, M., Assanto, G. (2007). Germanium near infrared detector in silicon on insulator. APPLIED PHYSICS LETTERS, 91(2) [10.1063/1.2757123].

Germanium near infrared detector in silicon on insulator

ASSANTO, GAETANO
2007-01-01

Abstract

The authors demonstrate near infrared photodetectors in evaporated germanium on silicon-on-insulator waveguides. The authors achieve peak responsivities as high as 1 A/W and dark current densities as low as 40 nA at a reverse bias of 1 V. Owing to the low deposition temperature, this technology allows for simple and low cost monolithic integration with silicon. (C) 2007 American Institute of Physics.
Colace, L., Sorianello, V., Balbi, M., Assanto, G. (2007). Germanium near infrared detector in silicon on insulator. APPLIED PHYSICS LETTERS, 91(2) [10.1063/1.2757123].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/149076
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