The authors demonstrate near infrared photodetectors in evaporated germanium on silicon-on-insulator waveguides. The authors achieve peak responsivities as high as 1 A/W and dark current densities as low as 40 nA at a reverse bias of 1 V. Owing to the low deposition temperature, this technology allows for simple and low cost monolithic integration with silicon. (C) 2007 American Institute of Physics.
Colace L, Sorianello V, Balbi M, & Assanto G (2007). Germanium near infrared detector in silicon on insulator. APPLIED PHYSICS LETTERS, 91(2) [10.1063/1.2757123].
Titolo: | Germanium near infrared detector in silicon on insulator | |
Autori: | ||
Data di pubblicazione: | 2007 | |
Rivista: | ||
Citazione: | Colace L, Sorianello V, Balbi M, & Assanto G (2007). Germanium near infrared detector in silicon on insulator. APPLIED PHYSICS LETTERS, 91(2) [10.1063/1.2757123]. | |
Abstract: | The authors demonstrate near infrared photodetectors in evaporated germanium on silicon-on-insulator waveguides. The authors achieve peak responsivities as high as 1 A/W and dark current densities as low as 40 nA at a reverse bias of 1 V. Owing to the low deposition temperature, this technology allows for simple and low cost monolithic integration with silicon. (C) 2007 American Institute of Physics. | |
Handle: | http://hdl.handle.net/11590/149076 | |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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