We report on the first silicon-integrated 2-D light-sensitive array equipped with complementary-metal-oxide-semiconductor addressing and readout electronics and operating in the near infrared. The chip includes 64 x 8 pixels, 64 analog-to-digital converters, cancellation circuitry for dark current, and facilities for test/calibration. We describe its architecture and fabrication, its electronic and optoelectronic characterization, as well as its operation as a near-infrared camera.

Colace, L., Masini, G., Cencelli, V., Denotaristefani, F., Assanto, G. (2007). A near-infrared digital camera in polycrystalline germanium integrated on silicon. IEEE JOURNAL OF QUANTUM ELECTRONICS, 43(3-4), 311-315 [10.1109/JQE.2006.893001].

A near-infrared digital camera in polycrystalline germanium integrated on silicon

ASSANTO, GAETANO
2007-01-01

Abstract

We report on the first silicon-integrated 2-D light-sensitive array equipped with complementary-metal-oxide-semiconductor addressing and readout electronics and operating in the near infrared. The chip includes 64 x 8 pixels, 64 analog-to-digital converters, cancellation circuitry for dark current, and facilities for test/calibration. We describe its architecture and fabrication, its electronic and optoelectronic characterization, as well as its operation as a near-infrared camera.
Colace, L., Masini, G., Cencelli, V., Denotaristefani, F., Assanto, G. (2007). A near-infrared digital camera in polycrystalline germanium integrated on silicon. IEEE JOURNAL OF QUANTUM ELECTRONICS, 43(3-4), 311-315 [10.1109/JQE.2006.893001].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/149079
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