Benvenuti nell'Anagrafe della Ricerca d'Ateneo
La valutazione delle attività di ricerca che si svolgono nelle università ha assunto un'importanza rilevante sia per l'intero sistema universitario sia all'interno di ogni singolo ateneo. Roma Tre si è quindi dotata di idonei strumenti informativi in grado di supportare al meglio le azioni di monitoraggio e di valutazione delle attività di ricerca svolte nei propri dipartimentied ha realizzato una Anagrafe della Ricerca di Ateneo.
EnglishThe response of polycrystalline diamond detectors to low-energy x-ray beams is presented. Diamond metal/semiconductor/metal vertical structures have been realized to investigate the influence of the electric field in the dark and under x-ray irradiation. Nonlinear contributions to the current, compatible with field-assisted thermal ionization of trapped charges, have been evidenced, as well as the presence of defect-related electronic states acting as traps has been confirmed by subband-gap photoconductivity measurements. Moreover, correlations have been evidenced among irradiation time, variation of the current in the dark, and photoconductive response of the devices to the x-ray beam. An evaluation of the minority-carrier mobility-lifetime product, at the end of the activation process, has led to a value of 9.210−7 cm2 /V. Two orders of magnitude linear response to the beam intensity variations have been evaluated after removal of the bremsstrahlung radiation contribution on a 43-um-thick device.
CONTE G, ROSSI M.C., SALVATORI S., ASCARELLI P., & TRUCCHI D. (2004). Thin Polycrystalline Diamond for Low Energy X-Ray Detection. JOURNAL OF APPLIED PHYSICS, 96, 6415.
| Titolo: | Thin Polycrystalline Diamond for Low Energy X-Ray Detection |
| Autori: | |
| Data di pubblicazione: | 2004 |
| Rivista: | |
| Citazione: | CONTE G, ROSSI M.C., SALVATORI S., ASCARELLI P., & TRUCCHI D. (2004). Thin Polycrystalline Diamond for Low Energy X-Ray Detection. JOURNAL OF APPLIED PHYSICS, 96, 6415. |
| Abstract: | The response of polycrystalline diamond detectors to low-energy x-ray beams is presented. Diamond metal/semiconductor/metal vertical structures have been realized to investigate the influence of the electric field in the dark and under x-ray irradiation. Nonlinear contributions to the current, compatible with field-assisted thermal ionization of trapped charges, have been evidenced, as well as the presence of defect-related electronic states acting as traps has been confirmed by subband-gap photoconductivity measurements. Moreover, correlations have been evidenced among irradiation time, variation of the current in the dark, and photoconductive response of the devices to the x-ray beam. An evaluation of the minority-carrier mobility-lifetime product, at the end of the activation process, has led to a value of 9.210−7 cm2 /V. Two orders of magnitude linear response to the beam intensity variations have been evaluated after removal of the bremsstrahlung radiation contribution on a 43-um-thick device. |
| Handle: | http://hdl.handle.net/11590/149249 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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