Benvenuti nell'Anagrafe della Ricerca d'Ateneo
La valutazione delle attività di ricerca che si svolgono nelle università ha assunto un'importanza rilevante sia per l'intero sistema universitario sia all'interno di ogni singolo ateneo. Roma Tre si è quindi dotata di idonei strumenti informativi in grado di supportare al meglio le azioni di monitoraggio e di valutazione delle attività di ricerca svolte nei propri dipartimentied ha realizzato una Anagrafe della Ricerca di Ateneo.
EnglishWe have investigated the structural and electrical behavior of Fe centers introduced in InP by high temperature ion implantation. The effect of post-implantation annealing treatments on the crystal damage and the lattice location of the Fe atoms was studied by PIXE-RBS-channeling measurements. Current-voltage measurements and simulations were used to characterize the electrical properties due to the presence of Fe-related deep traps. The results show that the background n-doping density plays a crucial role in controlling the annealing behavior and the electrical activation of the Fe centers.
Cesca, T., Verna, A., Mattei, G., Gasparotto, A., Fraboni, B., Impellizzeri, G., et al. (2006). Ion beam analysis and electrical characterization of substitutional Fe properties in Fe implanted InP. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 249, 894-896 [10.1016/j.nimb.2006.03.158].
| Titolo: | Ion beam analysis and electrical characterization of substitutional Fe properties in Fe implanted InP | |
| Autori: | ||
| Data di pubblicazione: | 2006 | |
| Rivista: | ||
| Citazione: | Cesca, T., Verna, A., Mattei, G., Gasparotto, A., Fraboni, B., Impellizzeri, G., et al. (2006). Ion beam analysis and electrical characterization of substitutional Fe properties in Fe implanted InP. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 249, 894-896 [10.1016/j.nimb.2006.03.158]. | |
| Abstract: | We have investigated the structural and electrical behavior of Fe centers introduced in InP by high temperature ion implantation. The effect of post-implantation annealing treatments on the crystal damage and the lattice location of the Fe atoms was studied by PIXE-RBS-channeling measurements. Current-voltage measurements and simulations were used to characterize the electrical properties due to the presence of Fe-related deep traps. The results show that the background n-doping density plays a crucial role in controlling the annealing behavior and the electrical activation of the Fe centers. | |
| Handle: | http://hdl.handle.net/11590/150023 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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