We present a phenomenological model for the electrical transport in double-layered cuprates, based on the existence of two energy barriers along the c-axis. The model is applied to measurements of the dc resistivity in Bi2Sr2CaCu2O8+d single crystals. We find that the model gives a comprehensive description of the out-of-plane normal resistivity qc at various doping d. Once the normal state has been determined, it is possible to obtain the fraction g(T, d) of the carriers that, below the pseudogap temperature T *, do not participate to the c-axis conductivity. We find that all the curves g(T, d) collapse onto a single universal curve g[T/T *(d)].
M., G., R., F., S., S., Pompeo, N., E., S. (2007). Interlayer tunnel and thermal activation in c-axis transport in Bi2Sr2CaCu2O8+d. PHYSICA. C, SUPERCONDUCTIVITY, 460-462, 831-832 [10.1016/j.physc.2007.04.088].
Interlayer tunnel and thermal activation in c-axis transport in Bi2Sr2CaCu2O8+d
POMPEO, NICOLA;
2007-01-01
Abstract
We present a phenomenological model for the electrical transport in double-layered cuprates, based on the existence of two energy barriers along the c-axis. The model is applied to measurements of the dc resistivity in Bi2Sr2CaCu2O8+d single crystals. We find that the model gives a comprehensive description of the out-of-plane normal resistivity qc at various doping d. Once the normal state has been determined, it is possible to obtain the fraction g(T, d) of the carriers that, below the pseudogap temperature T *, do not participate to the c-axis conductivity. We find that all the curves g(T, d) collapse onto a single universal curve g[T/T *(d)].I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
