We realize and test power monitors monolithically integrated on silicon-on-insulator optical chips. The devices consist of near-infrared waveguide photodetectors in evaporated germanium with front-end transimpedance amplifiers. The power monitors operate with signals as small as 10nW, with errors below 0.2% and 2% at 1 and 0.1 mu W, respectively.

Colace, L., Sorianello, V., Romagnoli, M., Assanto, G. (2010). Near-Infrared Ge-on-Si Power Monitors Monolithically Integrated on SOI Chips. IEEE PHOTONICS TECHNOLOGY LETTERS, 22(9), 658-660 [10.1109/LPT.2010.2043729].

Near-Infrared Ge-on-Si Power Monitors Monolithically Integrated on SOI Chips

COLACE, Lorenzo;ASSANTO, GAETANO
2010-01-01

Abstract

We realize and test power monitors monolithically integrated on silicon-on-insulator optical chips. The devices consist of near-infrared waveguide photodetectors in evaporated germanium with front-end transimpedance amplifiers. The power monitors operate with signals as small as 10nW, with errors below 0.2% and 2% at 1 and 0.1 mu W, respectively.
Colace, L., Sorianello, V., Romagnoli, M., Assanto, G. (2010). Near-Infrared Ge-on-Si Power Monitors Monolithically Integrated on SOI Chips. IEEE PHOTONICS TECHNOLOGY LETTERS, 22(9), 658-660 [10.1109/LPT.2010.2043729].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/151885
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