We realize and test power monitors monolithically integrated on silicon-on-insulator optical chips. The devices consist of near-infrared waveguide photodetectors in evaporated germanium with front-end transimpedance amplifiers. The power monitors operate with signals as small as 10nW, with errors below 0.2% and 2% at 1 and 0.1 mu W, respectively.
Colace L, Sorianello V, Romagnoli M, & Assanto G (2010). Near-Infrared Ge-on-Si Power Monitors Monolithically Integrated on SOI Chips. IEEE PHOTONICS TECHNOLOGY LETTERS, 22(9), 658-660 [10.1109/LPT.2010.2043729].
Titolo: | Near-Infrared Ge-on-Si Power Monitors Monolithically Integrated on SOI Chips | |
Autori: | ||
Data di pubblicazione: | 2010 | |
Rivista: | ||
Citazione: | Colace L, Sorianello V, Romagnoli M, & Assanto G (2010). Near-Infrared Ge-on-Si Power Monitors Monolithically Integrated on SOI Chips. IEEE PHOTONICS TECHNOLOGY LETTERS, 22(9), 658-660 [10.1109/LPT.2010.2043729]. | |
Abstract: | We realize and test power monitors monolithically integrated on silicon-on-insulator optical chips. The devices consist of near-infrared waveguide photodetectors in evaporated germanium with front-end transimpedance amplifiers. The power monitors operate with signals as small as 10nW, with errors below 0.2% and 2% at 1 and 0.1 mu W, respectively. | |
Handle: | http://hdl.handle.net/11590/151885 | |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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