We demonstrate fast and efficient germanium-on-silicon p-i-n photodetectors for optical communications, with responsivities as high as 0.89 and 0.75 A/W at 1.3 and 1.55 mum, respectively, time response <200 ps and dark currents as low as 1.2 muA. Ge was epitaxially grown on Si by chemical vapor deposition, employing a low temperature buffer and cyclic thermal annealing to reduce the dislocation density. The overall performance is well suited for >2.5 Gb/s integrated receivers for the second and third fiber spectral windows. (C) 2002 American Institute of Physics.

Fama, S., Colace, L., Masini, G., Assanto, G., Luan, H.c. (2002). High performance germanium-on-silicon detectors for optical communications. APPLIED PHYSICS LETTERS, 81(4), 586-588 [10.1063/1.1496492].

High performance germanium-on-silicon detectors for optical communications

COLACE, Lorenzo;ASSANTO, GAETANO;
2002-01-01

Abstract

We demonstrate fast and efficient germanium-on-silicon p-i-n photodetectors for optical communications, with responsivities as high as 0.89 and 0.75 A/W at 1.3 and 1.55 mum, respectively, time response <200 ps and dark currents as low as 1.2 muA. Ge was epitaxially grown on Si by chemical vapor deposition, employing a low temperature buffer and cyclic thermal annealing to reduce the dislocation density. The overall performance is well suited for >2.5 Gb/s integrated receivers for the second and third fiber spectral windows. (C) 2002 American Institute of Physics.
2002
Fama, S., Colace, L., Masini, G., Assanto, G., Luan, H.c. (2002). High performance germanium-on-silicon detectors for optical communications. APPLIED PHYSICS LETTERS, 81(4), 586-588 [10.1063/1.1496492].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/151894
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