We demonstrate fast and efficient germanium-on-silicon p-i-n photodetectors for optical communications, with responsivities as high as 0.89 and 0.75 A/W at 1.3 and 1.55 mum, respectively, time response <200 ps and dark currents as low as 1.2 muA. Ge was epitaxially grown on Si by chemical vapor deposition, employing a low temperature buffer and cyclic thermal annealing to reduce the dislocation density. The overall performance is well suited for >2.5 Gb/s integrated receivers for the second and third fiber spectral windows. (C) 2002 American Institute of Physics.
Fama, S., Colace, L., Masini, G., Assanto, G., Luan, H.c. (2002). High performance germanium-on-silicon detectors for optical communications. APPLIED PHYSICS LETTERS, 81(4), 586-588 [10.1063/1.1496492].
High performance germanium-on-silicon detectors for optical communications
COLACE, Lorenzo;ASSANTO, GAETANO;
2002-01-01
Abstract
We demonstrate fast and efficient germanium-on-silicon p-i-n photodetectors for optical communications, with responsivities as high as 0.89 and 0.75 A/W at 1.3 and 1.55 mum, respectively, time response <200 ps and dark currents as low as 1.2 muA. Ge was epitaxially grown on Si by chemical vapor deposition, employing a low temperature buffer and cyclic thermal annealing to reduce the dislocation density. The overall performance is well suited for >2.5 Gb/s integrated receivers for the second and third fiber spectral windows. (C) 2002 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
