We have fabricated Ge/Si heterojunction photodetectors with high responsivities of 550 mA/W at 1.32 mu m and 250 mA/W at 1.55 mu m and time responses shorter than 850 ps. High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition followed by cyclic thermal annealing. The beneficial effect of the post-growth thermal annealing on the electrical properties of Ge epilayers, due to the reduction of threading-dislocation densities, is confirmed by the dramatic enhancement of the performance of the photodetectors. (C) 2000 American Institute of Physics. [S0003-6951(00)03410-0].
Colace, L., Masini, G., Assanto, G., Luan, H.c., Wada, K., Kimerling, L.c. (2000). Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates. APPLIED PHYSICS LETTERS, 76(10), 1231-1233 [10.1063/1.125993].
Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates
COLACE, Lorenzo;ASSANTO, GAETANO;
2000-01-01
Abstract
We have fabricated Ge/Si heterojunction photodetectors with high responsivities of 550 mA/W at 1.32 mu m and 250 mA/W at 1.55 mu m and time responses shorter than 850 ps. High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition followed by cyclic thermal annealing. The beneficial effect of the post-growth thermal annealing on the electrical properties of Ge epilayers, due to the reduction of threading-dislocation densities, is confirmed by the dramatic enhancement of the performance of the photodetectors. (C) 2000 American Institute of Physics. [S0003-6951(00)03410-0].I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
