In this paper we present the fabrication process of capacitive micromachined ultrasonic transducers by means of surface micromachining techniques using silicon on insulator (SOI) substrates as starting material. The use of SOI substrates provides a structural layer, in which the free-standing membranes are fabricated, of crystal silicon with excellent mechanical properties, and a sacrificial layer of buried oxide that can be etched selectively with respect to silicon. The process we developed has allowed to obtain transducers with resonance frequency at 6 MHz in air.
E., C., V., F., Caliano, G., M., P. (2002). Micromachined capacitive ultrasonic transducers fabricated using silicon on insulator wafers. MICROELECTRONIC ENGINEERING, 61-62, 1025-1029 [10.1016/S0167-9317(02)00423-9].
Micromachined capacitive ultrasonic transducers fabricated using silicon on insulator wafers
CALIANO, Giosue';
2002-01-01
Abstract
In this paper we present the fabrication process of capacitive micromachined ultrasonic transducers by means of surface micromachining techniques using silicon on insulator (SOI) substrates as starting material. The use of SOI substrates provides a structural layer, in which the free-standing membranes are fabricated, of crystal silicon with excellent mechanical properties, and a sacrificial layer of buried oxide that can be etched selectively with respect to silicon. The process we developed has allowed to obtain transducers with resonance frequency at 6 MHz in air.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
