We used photocurrent spectroscopy at 300 K, 77 K and 4.2 K to investigate the optical absorption processes of (001) Si-Ge strained layer superlattices and alloys with an average composition of 50%Si-50%Ge. We observed an evolution toward higher energies of the threshold in the photocurrent spectra as the period of the superlattices decreases, with the spectrum of the shortest period superlattices (2:2) approaching that of the alloy. The energy dependence of absorption in these Si-Gr heterostructures is quite distinct from that measured in elemental silicon.

Colace, L., Divergilio, A., Vaidyanathan, S., Pearsall, T.p., Presting, H., Kasper, E. (1996). Photocurrent spectroscopy measurements of Si-Ge alloys and superlattices. APPLIED SURFACE SCIENCE, 102, 272-278 [10.1016/0169-4332(96)00063-3].

Photocurrent spectroscopy measurements of Si-Ge alloys and superlattices

COLACE, Lorenzo;
1996-01-01

Abstract

We used photocurrent spectroscopy at 300 K, 77 K and 4.2 K to investigate the optical absorption processes of (001) Si-Ge strained layer superlattices and alloys with an average composition of 50%Si-50%Ge. We observed an evolution toward higher energies of the threshold in the photocurrent spectra as the period of the superlattices decreases, with the spectrum of the shortest period superlattices (2:2) approaching that of the alloy. The energy dependence of absorption in these Si-Gr heterostructures is quite distinct from that measured in elemental silicon.
Colace, L., Divergilio, A., Vaidyanathan, S., Pearsall, T.p., Presting, H., Kasper, E. (1996). Photocurrent spectroscopy measurements of Si-Ge alloys and superlattices. APPLIED SURFACE SCIENCE, 102, 272-278 [10.1016/0169-4332(96)00063-3].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/154627
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