We experimentally investigate the large-signal radio frequency performances of surface-channel p-type diamond MESFETs fabricated on hydrogenated polycrystalline diamond. The devices under examination have a coplanar layout with two gate ﬁngers, total gate periphery of 100 lm; in DC they exhibit a hole accumulation behavior with threshold voltage V t 0–0.5 V and maximum drain current density of 120 mA/mm. The best small-signal radio frequency performances (maximum cutoff or transition fre- quency f T and oscillation frequency f max ) were obtained close to the threshold and were of the order of 6 and 15 GHz, respectively. The power radio frequency response was characterized by driving the devices in class A at an operating frequency of 2 GHz and identifying through the active load-pull technique the optimum load for maximum power added efﬁciency. A power gain in linearity of 8 dB and an output power of approximately 0.2 W/mm with 22% power added efﬁciency were obtained on the optimum load impedance at a bias point V DS = 14 V, V GS = 1 V. To the best of our knowledge, these are the ﬁrst large signal measurements ever reported for surface MESFET on polycrystalline diamond, and show the poten- tial of such technology for the development of microwave power devices.
Camarchia, V., Cappelluti, F., Ghione, G., Rossi, M.C., Calvani, P., Conte, G., et al. (2011). RF Power Performance Evaluation of Surface Channel Diamond MESFET. SOLID-STATE ELECTRONICS, 55, 19-24.
|Titolo:||RF Power Performance Evaluation of Surface Channel Diamond MESFET|
|Data di pubblicazione:||2011|
|Citazione:||Camarchia, V., Cappelluti, F., Ghione, G., Rossi, M.C., Calvani, P., Conte, G., et al. (2011). RF Power Performance Evaluation of Surface Channel Diamond MESFET. SOLID-STATE ELECTRONICS, 55, 19-24.|
|Appare nelle tipologie:||1.1 Articolo in rivista|