We numerically study a narrowband semiconductor integrated source of counterpropagating twin photons for line-of-sight experiments in quantum key distribution. Considering the air transparency and the availability of silicon avalanche photodiodes to be around 770 nm, we focus on GaN- and ZnSe-based quadratically nonlinear multilayer waveguides. The design of a quasi-phase-matched &chi^(2) profile in the growth direction allows us to generate 3×105 guided photon pairs per second for a pump power around 300 mW.
Ducci, S., Leo, G., Berger, V., DE ROSSI, A., Assanto, G. (2005). Integrated Twin Photon Sources for the silicon absorption band: a numerical study ", J. Opt. Soc. Am. B 22(11), 2331-37 (2005);. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA. B, OPTICAL PHYSICS, 22, 2331-2337.
Integrated Twin Photon Sources for the silicon absorption band: a numerical study ", J. Opt. Soc. Am. B 22(11), 2331-37 (2005);
LEO, Giuseppe;ASSANTO, GAETANO
2005-01-01
Abstract
We numerically study a narrowband semiconductor integrated source of counterpropagating twin photons for line-of-sight experiments in quantum key distribution. Considering the air transparency and the availability of silicon avalanche photodiodes to be around 770 nm, we focus on GaN- and ZnSe-based quadratically nonlinear multilayer waveguides. The design of a quasi-phase-matched &chi^(2) profile in the growth direction allows us to generate 3×105 guided photon pairs per second for a pump power around 300 mW.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
