Using a guided wave configuration, we demonstrate a novel polyGe-on-Si heterostructure photodetector realized on a silicon-on-insulator by a low deposition temperature process. Without further detector optimization, at 1.55 µm we measured wall-plug responsivities as high as 15 mA/W with an effective responsivity in excess of 300 mA/W. Device operation was demonstrated up to 2.5 Gbit/s
Colace, L., Masini, G., Assanto, G. (2005). Guided-wave near-infrared detector in polycrystalline Germanium on Silicon”, Appl. Phys. Lett. 87, 203507 (2005), 87, 203507.
Guided-wave near-infrared detector in polycrystalline Germanium on Silicon”, Appl. Phys. Lett. 87, 203507 (2005)
COLACE, Lorenzo;MASINI, Gianlorenzo;ASSANTO, GAETANO
2005-01-01
Abstract
Using a guided wave configuration, we demonstrate a novel polyGe-on-Si heterostructure photodetector realized on a silicon-on-insulator by a low deposition temperature process. Without further detector optimization, at 1.55 µm we measured wall-plug responsivities as high as 15 mA/W with an effective responsivity in excess of 300 mA/W. Device operation was demonstrated up to 2.5 Gbit/sFile in questo prodotto:
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