We have studied the electrical activation of the Fe2+3+ trap in Fe-implanted InP by means of capacitance-voltage and deep level transient spectroscopy analyses. Five deep traps have been identified and we have characterized the concentration and depth distribution of the Fe2+3+ deep trap, located at EC -0.66 eV. The InP substrate background doping, i.e., the Fermi-level position, plays a crucial role in the Fe activation process by setting an upper limit to the amount of Fe centers electrically activated as deep acceptor traps. © 2005 American Institute of Physics.

Fraboni, B., Gasparotto, A., Cesca, T., Verna, A., Impellizzeri, G., & Priolo, F. (2005). Electrical activation of the Fe2+/3+ trap in Fe-implanted InP. APPLIED PHYSICS LETTERS, 87(25), 252113-1-252113-3 [10.1063/1.2150281].

Electrical activation of the Fe2+/3+ trap in Fe-implanted InP

VERNA, ADRIANO;
2005

Abstract

We have studied the electrical activation of the Fe2+3+ trap in Fe-implanted InP by means of capacitance-voltage and deep level transient spectroscopy analyses. Five deep traps have been identified and we have characterized the concentration and depth distribution of the Fe2+3+ deep trap, located at EC -0.66 eV. The InP substrate background doping, i.e., the Fermi-level position, plays a crucial role in the Fe activation process by setting an upper limit to the amount of Fe centers electrically activated as deep acceptor traps. © 2005 American Institute of Physics.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11590/307022
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