We have studied the electrical activation of the Fe2+3+ trap in Fe-implanted InP by means of capacitance-voltage and deep level transient spectroscopy analyses. Five deep traps have been identified and we have characterized the concentration and depth distribution of the Fe2+3+ deep trap, located at EC -0.66 eV. The InP substrate background doping, i.e., the Fermi-level position, plays a crucial role in the Fe activation process by setting an upper limit to the amount of Fe centers electrically activated as deep acceptor traps. © 2005 American Institute of Physics.
|Titolo:||Electrical activation of the Fe2+/3+ trap in Fe-implanted InP|
|Data di pubblicazione:||2005|
|Citazione:||Fraboni, B., Gasparotto, A., Cesca, T., Verna, A., Impellizzeri, G., & Priolo, F. (2005). Electrical activation of the Fe2+/3+ trap in Fe-implanted InP. APPLIED PHYSICS LETTERS, 87(25), 252113-1-252113-3.|
|Appare nelle tipologie:||1.1 Articolo in rivista|