We present a novel method for the extraction of the relevant electrical and physical parameters of Schottky diodes realized on polycrystalline thin films. The proposed approach relies on a limited set of current-voltage characteristics measured at different temperatures and does not require the previous knowledge of any semiconductor parameter. The procedure provides satisfactory results in terms of relative errors even in the case of nonideal characteristics, including a very large series resistance and strong temperature and bias dependence of both barrier and ideality factor. We tested the approach on both simulated devices and real Cr-poly-Si Schottky diodes.
DE IACOVO, A., Colace, L., Assanto, G., Maiolo, L., Pecora, A. (2015). Extraction of Schottky barrier parameters for metal-semiconductor junctions on high resistivity inhomogeneous, semiconductors. IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(2), 465-470 [10.1109/TED.2014.2378015].
Extraction of Schottky barrier parameters for metal-semiconductor junctions on high resistivity inhomogeneous, semiconductors
DE IACOVO, ANDREA;COLACE, Lorenzo;ASSANTO, GAETANO;MAIOLO, LUCA;
2015-01-01
Abstract
We present a novel method for the extraction of the relevant electrical and physical parameters of Schottky diodes realized on polycrystalline thin films. The proposed approach relies on a limited set of current-voltage characteristics measured at different temperatures and does not require the previous knowledge of any semiconductor parameter. The procedure provides satisfactory results in terms of relative errors even in the case of nonideal characteristics, including a very large series resistance and strong temperature and bias dependence of both barrier and ideality factor. We tested the approach on both simulated devices and real Cr-poly-Si Schottky diodes.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
