When graphene is placed on a monolayer of semiconducting transition metal dichalcogenide (TMD) its band structure develops rich spin textures due to proximity spin-orbital effects with interfacial breaking of inversion symmetry. In this work, we show that the characteristic spin winding of low-energy states in graphene on a TMD monolayer enables current-driven spin polarization, a phenomenon known as the inverse spin galvanic effect (ISGE). By introducing a proper figure of merit, we quantify the efficiency of charge-to-spin conversion and show it is close to unity when the Fermi level approaches the spin minority band. Remarkably, at high electronic density, even though subbands with opposite spin helicities are occupied, the efficiency decays only algebraically. The giant ISGE predicted for graphene on TMD monolayers is robust against disorder and remains large at room temperature.

Manuel, O., Mirco, M., Raimondi, R., & Aires, F. (2017). Optimal Charge-to-Spin Conversion in Graphene on Transition-Metal Dichalcogenides. PHYSICAL REVIEW LETTERS, 119, 196801-1-196801-5 [10.1103/PhysRevLett.119.196801].

Optimal Charge-to-Spin Conversion in Graphene on Transition-Metal Dichalcogenides

RAIMONDI, Roberto;
2017

Abstract

When graphene is placed on a monolayer of semiconducting transition metal dichalcogenide (TMD) its band structure develops rich spin textures due to proximity spin-orbital effects with interfacial breaking of inversion symmetry. In this work, we show that the characteristic spin winding of low-energy states in graphene on a TMD monolayer enables current-driven spin polarization, a phenomenon known as the inverse spin galvanic effect (ISGE). By introducing a proper figure of merit, we quantify the efficiency of charge-to-spin conversion and show it is close to unity when the Fermi level approaches the spin minority band. Remarkably, at high electronic density, even though subbands with opposite spin helicities are occupied, the efficiency decays only algebraically. The giant ISGE predicted for graphene on TMD monolayers is robust against disorder and remains large at room temperature.
Manuel, O., Mirco, M., Raimondi, R., & Aires, F. (2017). Optimal Charge-to-Spin Conversion in Graphene on Transition-Metal Dichalcogenides. PHYSICAL REVIEW LETTERS, 119, 196801-1-196801-5 [10.1103/PhysRevLett.119.196801].
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11590/324293
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 71
  • ???jsp.display-item.citation.isi??? 70
social impact