The present invention relates to Ge-based light emitter structure that is CMOS compatible. In particular, the invention is related to a semiconductor light emitter device and to a process for fabricating a semiconductor light emitter device.
Capellini, G., Wenger, C., Schröder, T., Kozlowski, G. (2017)A CMOS-compatible germanium tunable Laser. . Brevetto No. EP 2626917 B1.
A CMOS-compatible germanium tunable Laser
Giovanni Capellini;
2017-01-01
Abstract
The present invention relates to Ge-based light emitter structure that is CMOS compatible. In particular, the invention is related to a semiconductor light emitter device and to a process for fabricating a semiconductor light emitter device.File in questo prodotto:
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