CAPELLINI, GIOVANNI
CAPELLINI, GIOVANNI
Dipartimento di Scienze
10Gbit/s transceiver on silicon
2008-01-01 Jeremy, Witzens; Gianlorenzo, Masini; Subal, Sahni; Behnam, Analui; Cary, Gunn; Capellini, Giovanni
2DEG based on strained Si on SGOI substrate
2008-01-01 DI GASPARE, Luciana; Notargiacomo, A; Giovine, E; DE SETA, Monica; Capellini, Giovanni; Pea, M; Ciasca, G; Evangelisti, F.
A 1550nm, 10Gbps monolithic optical receiver in 130nm CMOS with integrated Ge waveguide photodetector
2007-01-01 Masini, G; Capellini, Giovanni; Witzens, J; Gunn, C.
A CMOS-compatible germanium tunable Laser
2017-01-01 Capellini, Giovanni; Wenger, Christian; Schröder, Thomas; Kozlowski, Grzegorz
A Complete Fabrication Route for Atomic-Scale, Donor-Based Devices in Single-Crystal Germanium
2011-01-01 Scappucci, G; Capellini, Giovanni; Johnston, B; Klesse, Wm; Miwa, Ja; Simmons, My
A NIR-LED based on tensile strained, heavily doped Ge/Si μ-strips fabricated in a BiCMOS pilot line
2017-01-01 Capellini, G.; Lischke, S.; Nien, L. -W.; Kreissl, J.; Yamamoto, Y.; Virgilio, M.; Schaffner, J.; Klesse, W. M.; Wolansky, D.; Voigt, K.; Zimmermann, L.; Mai, A.; Tillack, B.; Schroeder, T.
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD
2017-01-01 Yamamoto, Yuji; Zaumseil, Peter; Capellini, Giovanni; Andreas Schubert, Markus; Hesse, Anne; Albani, Marco; Bergamaschini, Roberto; Montalenti, Francesco; Schroeder, Thomas; Tillack, Bernd
Advanced Coherent X-ray Diffraction and Electron Microscopy of Individual InP Nanocrystals on Si Nanotips for III-V-on-Si Electronics and Optoelectronics
2019-01-01 Niu, Gang; Leake, Steven John; Skibitzki, Oliver; Niermann, Tore; Carnis, Jerome; Kießling, Felix; Hatami, Fariba; Hussein, Emad Hameed; Schubert, Markus Andreas; Zaumseil, Peter; Capellini, Giovanni; Masselink, William Ted; Ren, Wei; Ye, Zuo-Guang; Lehmann, Michael; Schülli, Tobias; Schroeder, Thomas; Richard, Marie-Ingrid
Advanced GeSn/SiGeSn Group IV Heterostructure Lasers
2018-01-01 von den Driesch, Nils; Stange, Daniela; Rainko, Denis; Povstugar, Ivan; Zaumseil, Peter; Capellini, Giovanni; Schröder, Thomas; Denneulin, Thibaud; Ikonic, Zoran; Hartmann, Jean-Michel; Sigg, Hans; Mantl, Siegfried; Grützmacher, Detlev; Buca, Dan
Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on-insulator substrates
2009-01-01 Capellini, Giovanni; Ciasca, G; De Seta, M; Notargiacomo, A; Evangelisti, F; Nardone, M.
Alignment control of self-ordered three dimensional SiGe nanodots
2018-01-01 Yamamoto, Y.; Itoh, Y.; Zaumseil, P.; Schubert, M. A.; Capellini, G.; Montalenti, F; Washio, K.; Tillack, B.
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study
2008-01-01 DE SETA, Monica; Capellini, Giovanni; Evangelisti, F.
Alternative High n-Type Doping Techniques in Germanium
2014-01-01 Capellini, Giovanni; Klesse, Wm; Mattoni, G; Simmons, My; Scappucci, G.
Alternative semiconductor integration in Si microelectronics: materials, techniques & applications
2014-01-01 T., Schroeder; Capellini, Giovanni; R., Loo; J., Fompeyrine; Müssig, Hj
Atomic Force Microscopy and Photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100)
1996-01-01 Palange, E; Capellini, Giovanni; di Gaspare, L; Evangelisti, F.
Atomic Force Microscopy Lithography as a nanodevice development technique
1999-01-01 Notargiacomo, A; Foglietti, V; Cianci, E; Capellini, Giovanni; Adami, M; Faraci, P; Evangelisti, F; Nicolini, C.
Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition
1997-01-01 Capellini, Giovanni; Di Gaspare, L; Evangelisti, F; Palange, E.
Atomic layer doping of strained Ge-on-insulator thin films with high electron densities
2013-01-01 Klesse, Wm; Scappucci, G; Capellini, Giovanni; Hartmann, Jm; Simmons, My
Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering
2020-01-01 Grange, T.; Mukherjee, S.; Capellini, G.; Montanari, M.; Persichetti, L.; Di Gaspare, L.; Birner, S.; Attiaoui, A.; Moutanabbir, O.; Virgilio, M.; De Seta, M.
Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy
2009-01-01 Scappucci, G; Capellini, Giovanni; Lee, Wct; Simmons, My
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| 10Gbit/s transceiver on silicon | 1-gen-2008 | Jeremy, Witzens; Gianlorenzo, Masini; Subal, Sahni; Behnam, Analui; Cary, Gunn; Capellini, Giovanni | |
| 2DEG based on strained Si on SGOI substrate | 1-gen-2008 | DI GASPARE, Luciana; Notargiacomo, A; Giovine, E; DE SETA, Monica; Capellini, Giovanni; Pea, M; Ciasca, G; Evangelisti, F. | |
| A 1550nm, 10Gbps monolithic optical receiver in 130nm CMOS with integrated Ge waveguide photodetector | 1-gen-2007 | Masini, G; Capellini, Giovanni; Witzens, J; Gunn, C. | |
| A CMOS-compatible germanium tunable Laser | 1-gen-2017 | Capellini, Giovanni; Wenger, Christian; Schröder, Thomas; Kozlowski, Grzegorz | |
| A Complete Fabrication Route for Atomic-Scale, Donor-Based Devices in Single-Crystal Germanium | 1-gen-2011 | Scappucci, G; Capellini, Giovanni; Johnston, B; Klesse, Wm; Miwa, Ja; Simmons, My | |
| A NIR-LED based on tensile strained, heavily doped Ge/Si μ-strips fabricated in a BiCMOS pilot line | 1-gen-2017 | Capellini, G.; Lischke, S.; Nien, L. -W.; Kreissl, J.; Yamamoto, Y.; Virgilio, M.; Schaffner, J.; Klesse, W. M.; Wolansky, D.; Voigt, K.; Zimmermann, L.; Mai, A.; Tillack, B.; Schroeder, T. | |
| A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD | 1-gen-2017 | Yamamoto, Yuji; Zaumseil, Peter; Capellini, Giovanni; Andreas Schubert, Markus; Hesse, Anne; Albani, Marco; Bergamaschini, Roberto; Montalenti, Francesco; Schroeder, Thomas; Tillack, Bernd | |
| Advanced Coherent X-ray Diffraction and Electron Microscopy of Individual InP Nanocrystals on Si Nanotips for III-V-on-Si Electronics and Optoelectronics | 1-gen-2019 | Niu, Gang; Leake, Steven John; Skibitzki, Oliver; Niermann, Tore; Carnis, Jerome; Kießling, Felix; Hatami, Fariba; Hussein, Emad Hameed; Schubert, Markus Andreas; Zaumseil, Peter; Capellini, Giovanni; Masselink, William Ted; Ren, Wei; Ye, Zuo-Guang; Lehmann, Michael; Schülli, Tobias; Schroeder, Thomas; Richard, Marie-Ingrid | |
| Advanced GeSn/SiGeSn Group IV Heterostructure Lasers | 1-gen-2018 | von den Driesch, Nils; Stange, Daniela; Rainko, Denis; Povstugar, Ivan; Zaumseil, Peter; Capellini, Giovanni; Schröder, Thomas; Denneulin, Thibaud; Ikonic, Zoran; Hartmann, Jean-Michel; Sigg, Hans; Mantl, Siegfried; Grützmacher, Detlev; Buca, Dan | |
| Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on-insulator substrates | 1-gen-2009 | Capellini, Giovanni; Ciasca, G; De Seta, M; Notargiacomo, A; Evangelisti, F; Nardone, M. | |
| Alignment control of self-ordered three dimensional SiGe nanodots | 1-gen-2018 | Yamamoto, Y.; Itoh, Y.; Zaumseil, P.; Schubert, M. A.; Capellini, G.; Montalenti, F; Washio, K.; Tillack, B. | |
| Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study | 1-gen-2008 | DE SETA, Monica; Capellini, Giovanni; Evangelisti, F. | |
| Alternative High n-Type Doping Techniques in Germanium | 1-gen-2014 | Capellini, Giovanni; Klesse, Wm; Mattoni, G; Simmons, My; Scappucci, G. | |
| Alternative semiconductor integration in Si microelectronics: materials, techniques & applications | 1-gen-2014 | T., Schroeder; Capellini, Giovanni; R., Loo; J., Fompeyrine; Müssig, Hj | |
| Atomic Force Microscopy and Photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) | 1-gen-1996 | Palange, E; Capellini, Giovanni; di Gaspare, L; Evangelisti, F. | |
| Atomic Force Microscopy Lithography as a nanodevice development technique | 1-gen-1999 | Notargiacomo, A; Foglietti, V; Cianci, E; Capellini, Giovanni; Adami, M; Faraci, P; Evangelisti, F; Nicolini, C. | |
| Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition | 1-gen-1997 | Capellini, Giovanni; Di Gaspare, L; Evangelisti, F; Palange, E. | |
| Atomic layer doping of strained Ge-on-insulator thin films with high electron densities | 1-gen-2013 | Klesse, Wm; Scappucci, G; Capellini, Giovanni; Hartmann, Jm; Simmons, My | |
| Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering | 1-gen-2020 | Grange, T.; Mukherjee, S.; Capellini, G.; Montanari, M.; Persichetti, L.; Di Gaspare, L.; Birner, S.; Attiaoui, A.; Moutanabbir, O.; Virgilio, M.; De Seta, M. | |
| Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy | 1-gen-2009 | Scappucci, G; Capellini, Giovanni; Lee, Wct; Simmons, My |