Self-ordered three-dimensional body-centered tetragonal (BCT) SiGe nanodot structures are fabricated by depositing SiGe/Si superlattice layer stacks using reduced pressure chemical vapor deposition. For high enough Ge content in the island (>30%) and deposition temperature of the Si spacer layers (T > 700 °C), we observe the formation of an ordered array with islands arranged in staggered position in adjacent layers. The in plane periodicity of the islands can be selected by a suitable choice of the annealing temperature before the Si spacer layer growth and of the SiGe dot volume, while only a weak influence of the Ge concentration is observed. Phase-field simulations are used to clarify the driving force determining the observed BCT ordering, shedding light on the competition between heteroepitaxial strain and surface-energy minimization in the presence of a non-negligible surface roughness.

Yamamoto, Y., Zaumseil, P., Capellini, G., Andreas Schubert, M., Hesse, A., Albani, M., et al. (2017). A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD. NANOTECHNOLOGY, 28(48), 485303 [10.1088/1361-6528/aa91c1].

A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD

Capellini, Giovanni;
2017-01-01

Abstract

Self-ordered three-dimensional body-centered tetragonal (BCT) SiGe nanodot structures are fabricated by depositing SiGe/Si superlattice layer stacks using reduced pressure chemical vapor deposition. For high enough Ge content in the island (>30%) and deposition temperature of the Si spacer layers (T > 700 °C), we observe the formation of an ordered array with islands arranged in staggered position in adjacent layers. The in plane periodicity of the islands can be selected by a suitable choice of the annealing temperature before the Si spacer layer growth and of the SiGe dot volume, while only a weak influence of the Ge concentration is observed. Phase-field simulations are used to clarify the driving force determining the observed BCT ordering, shedding light on the competition between heteroepitaxial strain and surface-energy minimization in the presence of a non-negligible surface roughness.
Yamamoto, Y., Zaumseil, P., Capellini, G., Andreas Schubert, M., Hesse, A., Albani, M., et al. (2017). A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD. NANOTECHNOLOGY, 28(48), 485303 [10.1088/1361-6528/aa91c1].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/326831
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