Benvenuti nell'Anagrafe della Ricerca d'Ateneo

CAPELLINI, GIOVANNI

CAPELLINI, GIOVANNI  

Dipartimento di Scienze  

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Risultati 1 - 20 di 256 (tempo di esecuzione: 0.04 secondi).
Titolo Data di pubblicazione Autore(i) File
(Invited) Advancing Si Spin Qubit Research: Process Integration of Hall Bar FETs on Si/SiGe in a 200mm BiCMOS Pilot Line 1-gen-2024 Reichmann, Felix; Mistroni, Alberto; Yamamoto, Yuji; Kulse, Philipp; Marschmeyer, Steffen; Wolansky, Dirk; Fursenko, Oksana; Zöllner, Marvin Hartwig; Capellini, Giovanni; Diebel, Laura; Bougeard, Dominique; Lisker, Marco
10Gbit/s transceiver on silicon 1-gen-2008 Jeremy, Witzens; Gianlorenzo, Masini; Subal, Sahni; Behnam, Analui; Cary, Gunn; Capellini, Giovanni
2DEG based on strained Si on SGOI substrate 1-gen-2008 DI GASPARE, Luciana; Notargiacomo, A; Giovine, E; DE SETA, Monica; Capellini, Giovanni; Pea, M; Ciasca, G; Evangelisti, F.
A 1550nm, 10Gbps monolithic optical receiver in 130nm CMOS with integrated Ge waveguide photodetector 1-gen-2007 Masini, G; Capellini, Giovanni; Witzens, J; Gunn, C.
A CMOS-compatible germanium tunable Laser 1-gen-2017 Capellini, Giovanni; Wenger, Christian; Schröder, Thomas; Kozlowski, Grzegorz
A Complete Fabrication Route for Atomic-Scale, Donor-Based Devices in Single-Crystal Germanium 1-gen-2011 Scappucci, G; Capellini, Giovanni; Johnston, B; Klesse, Wm; Miwa, Ja; Simmons, My
A NIR-LED based on tensile strained, heavily doped Ge/Si μ-strips fabricated in a BiCMOS pilot line 1-gen-2017 Capellini, G.; Lischke, S.; Nien, L. -W.; Kreissl, J.; Yamamoto, Y.; Virgilio, M.; Schaffner, J.; Klesse, W. M.; Wolansky, D.; Voigt, K.; Zimmermann, L.; Mai, A.; Tillack, B.; Schroeder, T.
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 1-gen-2017 Yamamoto, Yuji; Zaumseil, Peter; Capellini, Giovanni; Andreas Schubert, Markus; Hesse, Anne; Albani, Marco; Bergamaschini, Roberto; Montalenti, Francesco; Schroeder, Thomas; Tillack, Bernd
Advanced Coherent X-ray Diffraction and Electron Microscopy of Individual InP Nanocrystals on Si Nanotips for III-V-on-Si Electronics and Optoelectronics 1-gen-2019 Niu, Gang; Leake, Steven John; Skibitzki, Oliver; Niermann, Tore; Carnis, Jerome; Kießling, Felix; Hatami, Fariba; Hussein, Emad Hameed; Schubert, Markus Andreas; Zaumseil, Peter; Capellini, Giovanni; Masselink, William Ted; Ren, Wei; Ye, Zuo-Guang; Lehmann, Michael; Schülli, Tobias; Schroeder, Thomas; Richard, Marie-Ingrid
Advanced GeSn/SiGeSn Group IV Heterostructure Lasers 1-gen-2018 von den Driesch, Nils; Stange, Daniela; Rainko, Denis; Povstugar, Ivan; Zaumseil, Peter; Capellini, Giovanni; Schröder, Thomas; Denneulin, Thibaud; Ikonic, Zoran; Hartmann, Jean-Michel; Sigg, Hans; Mantl, Siegfried; Grützmacher, Detlev; Buca, Dan
Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on-insulator substrates 1-gen-2009 Capellini, Giovanni; Ciasca, G; De Seta, M; Notargiacomo, A; Evangelisti, F; Nardone, M.
Alignment control of self-ordered three dimensional SiGe nanodots 1-gen-2018 Yamamoto, Y.; Itoh, Y.; Zaumseil, P.; Schubert, M. A.; Capellini, G.; Montalenti, F; Washio, K.; Tillack, B.
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 1-gen-2008 DE SETA, Monica; Capellini, Giovanni; Evangelisti, F.
All‐Epitaxial Self‐Assembly of Silicon Color Centers Confined Within Sub‐Nanometer Thin Layers Using Ultra‐Low Temperature Epitaxy 1-gen-2024 Aberl, Johannes; Navarrete, Enrique Prado; Karaman, Merve; Enriquez, Diego Haya; Wilflingseder, Christoph; Salomon, Andreas; Primetzhofer, Daniel; Schubert, Markus Andreas; Capellini, Giovanni; Fromherz, Thomas; Deák, Peter; Udvarhelyi, Péter; Li, Song; Gali, Ádám; Brehm, Moritz
Alternative High n-Type Doping Techniques in Germanium 1-gen-2014 Capellini, Giovanni; Klesse, Wm; Mattoni, G; Simmons, My; Scappucci, G.
Alternative semiconductor integration in Si microelectronics: materials, techniques & applications 1-gen-2014 T., Schroeder; Capellini, Giovanni; R., Loo; J., Fompeyrine; Müssig, Hj
Asymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study 1-gen-2024 Talamas Simola, E.; Ortolani, M.; Di Gaspare, L.; Capellini, G.; De Seta, M.; Virgilio, M.
Atomic Force Microscopy and Photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) 1-gen-1996 Palange, E; Capellini, Giovanni; di Gaspare, L; Evangelisti, F.
Atomic Force Microscopy Lithography as a nanodevice development technique 1-gen-1999 Notargiacomo, A; Foglietti, V; Cianci, E; Capellini, Giovanni; Adami, M; Faraci, P; Evangelisti, F; Nicolini, C.
Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition 1-gen-1997 Capellini, Giovanni; Di Gaspare, L; Evangelisti, F; Palange, E.