We present an edge-light emitting diode based on highly doped Ge/Si μ-strips starined by a SiN top stressor. The device, manufactured in a BiCMOS pilot line, shows RT NIR electroluminescence in a spectral region extending from the C- to the U-telecom bands and beyond.

Capellini, G., Lischke, S., Nien, L.-., Kreissl, J., Yamamoto, Y., Virgilio, M., et al. (2017). A NIR-LED based on tensile strained, heavily doped Ge/Si μ-strips fabricated in a BiCMOS pilot line. In 14th International Conference on Group IV Photonics, GFP 2017 (pp.43-44). Institute of Electrical and Electronics Engineers Inc. [10.1109/GROUP4.2017.8082187].

A NIR-LED based on tensile strained, heavily doped Ge/Si μ-strips fabricated in a BiCMOS pilot line

Capellini, G.;
2017-01-01

Abstract

We present an edge-light emitting diode based on highly doped Ge/Si μ-strips starined by a SiN top stressor. The device, manufactured in a BiCMOS pilot line, shows RT NIR electroluminescence in a spectral region extending from the C- to the U-telecom bands and beyond.
2017
9781509065684
Capellini, G., Lischke, S., Nien, L.-., Kreissl, J., Yamamoto, Y., Virgilio, M., et al. (2017). A NIR-LED based on tensile strained, heavily doped Ge/Si μ-strips fabricated in a BiCMOS pilot line. In 14th International Conference on Group IV Photonics, GFP 2017 (pp.43-44). Institute of Electrical and Electronics Engineers Inc. [10.1109/GROUP4.2017.8082187].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/330665
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