We report on the realization of high-mobility two-dimensional electron gas based on modulation-doped Si/SiGe heterostructure grown directly on thin SiGe-On-Insulator (SGOI) substrate. The samples were grown by using low-pressure chemical vapor deposition. A pregrowth procedure for the cleaning of the SGOI surface that preserves the integrity and the composition of the substrate was developed. An electron mobility as high as 10(5)cm(2)V(-1) s(-1) at T = 0.4 K and 2000 cm(2)V(-1) s(-1) at T = 300 K was obtained. (C) 2007 Elsevier B.V. All rights reserved.
DI GASPARE, L., Notargiacomo, A., Giovine, E., DE SETA, M., Capellini, G., Pea, M., et al. (2008). 2DEG based on strained Si on SGOI substrate. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 40(5), 1611-1613 [10.1016/j.physe.2007.09.159].
2DEG based on strained Si on SGOI substrate
DI GASPARE, LUCIANA;DE SETA, Monica;CAPELLINI, GIOVANNI;
2008-01-01
Abstract
We report on the realization of high-mobility two-dimensional electron gas based on modulation-doped Si/SiGe heterostructure grown directly on thin SiGe-On-Insulator (SGOI) substrate. The samples were grown by using low-pressure chemical vapor deposition. A pregrowth procedure for the cleaning of the SGOI surface that preserves the integrity and the composition of the substrate was developed. An electron mobility as high as 10(5)cm(2)V(-1) s(-1) at T = 0.4 K and 2000 cm(2)V(-1) s(-1) at T = 300 K was obtained. (C) 2007 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
