DI GASPARE, LUCIANA
DI GASPARE, LUCIANA
Dipartimento di Scienze
'X-ray scanning microscope study of strain instabilities in low mismatched SiGe alloys grown on Si(001) substrates
2002-01-01 DI GASPARE, Luciana; Evangelisti, A. N. O. T. A. R. G. I. A. C. O. M. O. F.; E., Palange; S., Pascarelli; AND J., Susini
2DEG based on strained Si on SGOI substrate
2008-01-01 DI GASPARE, Luciana; Notargiacomo, A; Giovine, E; DE SETA, Monica; Capellini, Giovanni; Pea, M; Ciasca, G; Evangelisti, F.
2DEG based on strained Si on SGOI substrate
2008-01-01 DI GASPARE, Luciana; Notargiacomo, A; Giovine, E; DE SETA, Monica; Capellini, G; Pea, M; Ciasca, G; Evangelisti, F.
A single electron transistor based on Si/SiGe wires
2003-01-01 A., Notargiacomo; DI GASPARE, Luciana; G., Scappucci; G., Mariottini; F., Evangelisti; E. GIOVINE AND R., Leoni
Abrupt Changes in the Graphene on Ge(001) System at the Onset of Surface Melting
2019-01-01 Di Gaspare, Luciana; Persichetti, Luca; Sgarlata, Anna; Fanfoni, Massimo; Notargiacomo, Andrea; Scaparro, Andrea Maria; Miseikis, Vaidotas; Fabbri, Filippo; Coletti, Camilla; De Seta, Monica
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting
2019-01-01 Persichetti, Luca; Di Gaspare, L.; Fabbri, F.; Scaparro, ANDREA MARIA; Notargiacomo, A.; Sgarlata, A.; Fanfoni, M.; Miseikis, V.; Coletti, C.; De Seta, M.
Asymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study
2024-01-01 Talamas Simola, E.; Ortolani, M.; Di Gaspare, L.; Capellini, G.; De Seta, M.; Virgilio, M.
Atomic Force Microscopy and photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100)
1996-01-01 E., Palange; G., Capellini; DI GASPARE, Luciana; AND F., Evangelisti
Atomic Force Microscopy study of self-organized Ge islands grown on Si(100) by Low Pressure Chemical Vapour Deposition
1997-01-01 G., Capellini; DI GASPARE, Luciana; F. EVANGELISTI AND E., Palange
Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering
2020-01-01 Grange, T.; Mukherjee, S.; Capellini, G.; Montanari, M.; Persichetti, L.; Di Gaspare, L.; Birner, S.; Attiaoui, A.; Moutanabbir, O.; Virgilio, M.; De Seta, M.
Ballistic transport in strained-Si cavities: experiment and theory
2004-01-01 Scappucci, G; DI GASPARE, Luciana; Notargiacomo, A; Evangelisti, F; Giovine, E; Leoni, R; Piazza, V; Pingue, P; Beltram, F; Pala, M; Curatola, ; Iannaccone, G.
Blending CoS and Pt for amelioration of electrodeposited transparent counterelectrodes and the efficiency of back-illuminated dye solar cells
2013-01-01 De Rossi, F; DI GASPARE, Luciana; Reale, A; Di Carlo, A; Brown, T. M.
Conductance and valley splitting in etched Si/SiGe one-dimensional nanostructures
2010-01-01 Frucci, G; DI GASPARE, Luciana; Evangelisti, F; Giovine, E; Notargiacomo, A; Piazza, V; Beltram, F.
Conductance anomalies in quantum point contacts
2009-01-01 Frucci, G; DI GASPARE, Luciana; Notargiacomo, A; Spirito, D; Evangelisti, F; Giovine, E.
Conductance quantization in etched Si/SiGe quantum point contacts
2006-01-01 Scappucci, G; DI GASPARE, Luciana; Giovine, E; Notargiacomo, A; Leoni, R; Evangelisti, F.
Conductance Quantization in Schottky-gated Si/SiGe Quantum Point Contacts
2007-01-01 Scappucci, G; DI GASPARE, Luciana; Giovine, E; Notargiacomo, A; Leoni, R; Evangelisti, F.
Control of Electron-State Coupling in Asymmetric Ge/Si−Ge Quantum Wells
2019-01-01 Ciano, Chiara; Virgilio, M.; Montanari, M.; Persichetti, L.; Di Gaspare, L.; Ortolani, M.; Baldassarre, L.; Zoellner, M. H.; Skibitzki, O.; Scalari, G.; Faist, J.; Paul, D. J.; Scuderi, M.; Nicotra, G.; Grange, T.; Birner, S.; Capellini, G.; De Seta, M.
Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source
2020-01-01 Becker, L.; Storck, P.; Schulz, T.; Zoellner, M. H.; Di Gaspare, L.; Rovaris, F.; Marzegalli, A.; Montalenti, F.; De Seta, M.; Capellini, G.; Schwalb, G.; Schroeder, T.; Albrecht, M.
Defects in SiGe virtual substrate for high mobility electron gas
2001-01-01 DI GASPARE, Luciana; P., Fiorini; G., Scappucci; F., Evangelisti; AND E., Palange
Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides
2020-01-01 Gallacher, K.; Ortolani, M.; Rew, K.; Ciano, C.; Baldassarre, L.; Virgilio, M.; Scalari, G.; Faist, J.; Di Gaspare, L.; De Seta, M.; Capellini, G.; Grange, T.; Birner, S.; Paul, D. J.
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| 'X-ray scanning microscope study of strain instabilities in low mismatched SiGe alloys grown on Si(001) substrates | 1-gen-2002 | DI GASPARE, Luciana; Evangelisti, A. N. O. T. A. R. G. I. A. C. O. M. O. F.; E., Palange; S., Pascarelli; AND J., Susini | |
| 2DEG based on strained Si on SGOI substrate | 1-gen-2008 | DI GASPARE, Luciana; Notargiacomo, A; Giovine, E; DE SETA, Monica; Capellini, Giovanni; Pea, M; Ciasca, G; Evangelisti, F. | |
| 2DEG based on strained Si on SGOI substrate | 1-gen-2008 | DI GASPARE, Luciana; Notargiacomo, A; Giovine, E; DE SETA, Monica; Capellini, G; Pea, M; Ciasca, G; Evangelisti, F. | |
| A single electron transistor based on Si/SiGe wires | 1-gen-2003 | A., Notargiacomo; DI GASPARE, Luciana; G., Scappucci; G., Mariottini; F., Evangelisti; E. GIOVINE AND R., Leoni | |
| Abrupt Changes in the Graphene on Ge(001) System at the Onset of Surface Melting | 1-gen-2019 | Di Gaspare, Luciana; Persichetti, Luca; Sgarlata, Anna; Fanfoni, Massimo; Notargiacomo, Andrea; Scaparro, Andrea Maria; Miseikis, Vaidotas; Fabbri, Filippo; Coletti, Camilla; De Seta, Monica | |
| Abrupt changes in the graphene on Ge(001) system at the onset of surface melting | 1-gen-2019 | Persichetti, Luca; Di Gaspare, L.; Fabbri, F.; Scaparro, ANDREA MARIA; Notargiacomo, A.; Sgarlata, A.; Fanfoni, M.; Miseikis, V.; Coletti, C.; De Seta, M. | |
| Asymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study | 1-gen-2024 | Talamas Simola, E.; Ortolani, M.; Di Gaspare, L.; Capellini, G.; De Seta, M.; Virgilio, M. | |
| Atomic Force Microscopy and photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) | 1-gen-1996 | E., Palange; G., Capellini; DI GASPARE, Luciana; AND F., Evangelisti | |
| Atomic Force Microscopy study of self-organized Ge islands grown on Si(100) by Low Pressure Chemical Vapour Deposition | 1-gen-1997 | G., Capellini; DI GASPARE, Luciana; F. EVANGELISTI AND E., Palange | |
| Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering | 1-gen-2020 | Grange, T.; Mukherjee, S.; Capellini, G.; Montanari, M.; Persichetti, L.; Di Gaspare, L.; Birner, S.; Attiaoui, A.; Moutanabbir, O.; Virgilio, M.; De Seta, M. | |
| Ballistic transport in strained-Si cavities: experiment and theory | 1-gen-2004 | Scappucci, G; DI GASPARE, Luciana; Notargiacomo, A; Evangelisti, F; Giovine, E; Leoni, R; Piazza, V; Pingue, P; Beltram, F; Pala, M; Curatola, ; Iannaccone, G. | |
| Blending CoS and Pt for amelioration of electrodeposited transparent counterelectrodes and the efficiency of back-illuminated dye solar cells | 1-gen-2013 | De Rossi, F; DI GASPARE, Luciana; Reale, A; Di Carlo, A; Brown, T. M. | |
| Conductance and valley splitting in etched Si/SiGe one-dimensional nanostructures | 1-gen-2010 | Frucci, G; DI GASPARE, Luciana; Evangelisti, F; Giovine, E; Notargiacomo, A; Piazza, V; Beltram, F. | |
| Conductance anomalies in quantum point contacts | 1-gen-2009 | Frucci, G; DI GASPARE, Luciana; Notargiacomo, A; Spirito, D; Evangelisti, F; Giovine, E. | |
| Conductance quantization in etched Si/SiGe quantum point contacts | 1-gen-2006 | Scappucci, G; DI GASPARE, Luciana; Giovine, E; Notargiacomo, A; Leoni, R; Evangelisti, F. | |
| Conductance Quantization in Schottky-gated Si/SiGe Quantum Point Contacts | 1-gen-2007 | Scappucci, G; DI GASPARE, Luciana; Giovine, E; Notargiacomo, A; Leoni, R; Evangelisti, F. | |
| Control of Electron-State Coupling in Asymmetric Ge/Si−Ge Quantum Wells | 1-gen-2019 | Ciano, Chiara; Virgilio, M.; Montanari, M.; Persichetti, L.; Di Gaspare, L.; Ortolani, M.; Baldassarre, L.; Zoellner, M. H.; Skibitzki, O.; Scalari, G.; Faist, J.; Paul, D. J.; Scuderi, M.; Nicotra, G.; Grange, T.; Birner, S.; Capellini, G.; De Seta, M. | |
| Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source | 1-gen-2020 | Becker, L.; Storck, P.; Schulz, T.; Zoellner, M. H.; Di Gaspare, L.; Rovaris, F.; Marzegalli, A.; Montalenti, F.; De Seta, M.; Capellini, G.; Schwalb, G.; Schroeder, T.; Albrecht, M. | |
| Defects in SiGe virtual substrate for high mobility electron gas | 1-gen-2001 | DI GASPARE, Luciana; P., Fiorini; G., Scappucci; F., Evangelisti; AND E., Palange | |
| Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides | 1-gen-2020 | Gallacher, K.; Ortolani, M.; Rew, K.; Ciano, C.; Baldassarre, L.; Virgilio, M.; Scalari, G.; Faist, J.; Di Gaspare, L.; De Seta, M.; Capellini, G.; Grange, T.; Birner, S.; Paul, D. J. |