We fabricated strongly confined Schottky-gated quantum point contacts by etching Si/SiGe heterostructures and observed intriguing conductance quantization in units of approximately 1e(2)/h. Nonlinear conductance measurements were performed depleting the quantum point contacts at fixed mode-energy separation. We report evidence of the formation of a half 1e(2)/h plateau, supporting the speculation that adiabatic transmission occurs through one-dimensional modes with complete removal of valley and spin degeneracies.
Scappucci G, Di Gaspare L, Giovine E, Notargiacomo A, Leoni R, & Evangelisti F (2006). Conductance quantization in etched Si/SiGe quantum point contacts. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 74(3).
Titolo: | Conductance quantization in etched Si/SiGe quantum point contacts |
Autori: | |
Data di pubblicazione: | 2006 |
Rivista: | |
Citazione: | Scappucci G, Di Gaspare L, Giovine E, Notargiacomo A, Leoni R, & Evangelisti F (2006). Conductance quantization in etched Si/SiGe quantum point contacts. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 74(3). |
Abstract: | We fabricated strongly confined Schottky-gated quantum point contacts by etching Si/SiGe heterostructures and observed intriguing conductance quantization in units of approximately 1e(2)/h. Nonlinear conductance measurements were performed depleting the quantum point contacts at fixed mode-energy separation. We report evidence of the formation of a half 1e(2)/h plateau, supporting the speculation that adiabatic transmission occurs through one-dimensional modes with complete removal of valley and spin degeneracies. |
Handle: | http://hdl.handle.net/11590/155522 |
Appare nelle tipologie: | 1.1 Articolo in rivista |