We fabricated strongly confined Schottky-gated quantum point contacts by etching Si/SiGe heterostructures and observed intriguing conductance quantization in units of approximately 1e(2)/h. Nonlinear conductance measurements were performed depleting the quantum point contacts at fixed mode-energy separation. We report evidence of the formation of a half 1e(2)/h plateau, supporting the speculation that adiabatic transmission occurs through one-dimensional modes with complete removal of valley and spin degeneracies.

Scappucci G, Di Gaspare L, Giovine E, Notargiacomo A, Leoni R, & Evangelisti F (2006). Conductance quantization in etched Si/SiGe quantum point contacts. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 74(3) [10.1103/PhysRevB.74.035321].

Conductance quantization in etched Si/SiGe quantum point contacts

DI GASPARE, LUCIANA;
2006

Abstract

We fabricated strongly confined Schottky-gated quantum point contacts by etching Si/SiGe heterostructures and observed intriguing conductance quantization in units of approximately 1e(2)/h. Nonlinear conductance measurements were performed depleting the quantum point contacts at fixed mode-energy separation. We report evidence of the formation of a half 1e(2)/h plateau, supporting the speculation that adiabatic transmission occurs through one-dimensional modes with complete removal of valley and spin degeneracies.
Scappucci G, Di Gaspare L, Giovine E, Notargiacomo A, Leoni R, & Evangelisti F (2006). Conductance quantization in etched Si/SiGe quantum point contacts. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 74(3) [10.1103/PhysRevB.74.035321].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11590/155522
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