In this letter we present an atomic force microscopy and photoluminescence investigation of two- and three-dimensional Ge structures deposited on Si(100) substrates. The photoluminescence spectra demonstrated the presence of quantum confinement effects in flat and uncapped Ge layers and in Ge islands even for the relatively large size of the structures. Moreover, a correlation between the sample morphology and the features of the photoluminescence is demonstrated.
Palange, E., Capellini, G., di Gaspare, L., Evangelisti, F. (1996). Atomic Force Microscopy and Photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100). APPLIED PHYSICS LETTERS, 68, 2982-2984 [10.1063/1.116669].
Atomic Force Microscopy and Photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100)
CAPELLINI, GIOVANNI;
1996-01-01
Abstract
In this letter we present an atomic force microscopy and photoluminescence investigation of two- and three-dimensional Ge structures deposited on Si(100) substrates. The photoluminescence spectra demonstrated the presence of quantum confinement effects in flat and uncapped Ge layers and in Ge islands even for the relatively large size of the structures. Moreover, a correlation between the sample morphology and the features of the photoluminescence is demonstrated.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
