A semiconductor light emitter device, comprising a substrate, an active layer made of Germanium, which is configured to emit light under application of an operating voltage to the semiconductor light emitter device, wherein a gap is arranged on the substrate, which extends between two bridgeposts laterally spaced from each other, the active layer is arranged on the bridgeposts and bridges the gap, and wherein the semiconductor light emitter device comprises a stressor layer, which induces a tensile strain in the active layer above the gap.
Capellini, , G., Wenger, , C., Schroder, , T., et al. (2018)CMOS-compatible germanium tunable laser. . Brevetto No. USPTO 9,985,416.
CMOS-compatible germanium tunable laser
Capellini; Giovanni
Membro del Collaboration Group
;
2018-01-01
Abstract
A semiconductor light emitter device, comprising a substrate, an active layer made of Germanium, which is configured to emit light under application of an operating voltage to the semiconductor light emitter device, wherein a gap is arranged on the substrate, which extends between two bridgeposts laterally spaced from each other, the active layer is arranged on the bridgeposts and bridges the gap, and wherein the semiconductor light emitter device comprises a stressor layer, which induces a tensile strain in the active layer above the gap.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
