Extending and controlling the spectral range of light detectors is very appealing for several sensing and imaging applications. Here we report on a normal incidence dual band photodetector operating in the visible and near infrared with a bias tunable spectral response. The device architecture is a germanium on silicon epitaxial structure made of two back-to-back connected photodiodes. The photodetectors show a broad photoresponse extending from 390nm to 1600nm with the capability to electronically select the shorter (400-1100 nm) or the longer (1000-1600 nm) portion with a relatively low applied voltage. Devices exhibit peak VIS and NIR responsivities of 0.33 and 0.63 A/W, respectively, a low optical crosstalk (<-30dB), a wide dynamic range (>120dB) and, thanks to their low voltage operation, maximum specific detectivities of 7·1011cmHz1/2/W and 2·1010cmHz1/2/W in the VIS and NIR, respectively.

Simola, E.T., De Iacovo, A., Frigerio, J., Ballabio, A., Fabbri, A., Isella, G., et al. (2019). Voltage-tunable dual-band Ge/Si photodetector operating in VIS and NIR spectral range. OPTICS EXPRESS, 27(6), 8529 [10.1364/OE.27.008529].

Voltage-tunable dual-band Ge/Si photodetector operating in VIS and NIR spectral range

De Iacovo, A.;Fabbri, A.;Isella, Giovanni;Colace, L.
2019-01-01

Abstract

Extending and controlling the spectral range of light detectors is very appealing for several sensing and imaging applications. Here we report on a normal incidence dual band photodetector operating in the visible and near infrared with a bias tunable spectral response. The device architecture is a germanium on silicon epitaxial structure made of two back-to-back connected photodiodes. The photodetectors show a broad photoresponse extending from 390nm to 1600nm with the capability to electronically select the shorter (400-1100 nm) or the longer (1000-1600 nm) portion with a relatively low applied voltage. Devices exhibit peak VIS and NIR responsivities of 0.33 and 0.63 A/W, respectively, a low optical crosstalk (<-30dB), a wide dynamic range (>120dB) and, thanks to their low voltage operation, maximum specific detectivities of 7·1011cmHz1/2/W and 2·1010cmHz1/2/W in the VIS and NIR, respectively.
2019
Simola, E.T., De Iacovo, A., Frigerio, J., Ballabio, A., Fabbri, A., Isella, G., et al. (2019). Voltage-tunable dual-band Ge/Si photodetector operating in VIS and NIR spectral range. OPTICS EXPRESS, 27(6), 8529 [10.1364/OE.27.008529].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/347603
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