We present a detailed scanning tunneling microscopy study which describes the morphological transition from ripple-to-dome islands during the growth of Ge on the vicinal Si(1 1 10) surface. Our experimental results show that the shape evolution of Ge islands on this surface is markedly different from that on the flat Si(001) substrate and is accomplished by agglomeration and coalescence of several ripples. By using published data of surface energy and finite-element analysis, we provide a meaningful explanation of our experimental observations. © 2010 The American Physical Society.
Persichetti, L., Sgarlata, A., Fanfoni, M., Balzarotti, A. (2010). Ripple-to-dome transition: The growth evolution of Ge on vicinal Si(1 1 10) surface. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 82(12), 121309 [10.1103/PhysRevB.82.121309].