We investigate the interdependent processes of strain and diffusion in the formation of holes and atolls obtained by rapid annealing of Ge/Si(111) islands at T ≈ 970 °C. We show that the shape evolution from islands to atolls and holes is closely captured by an analytical model including strain-driven diffusion. In the model, strain profiles obtained by finite element solutions of continuum elasticity equations are introduced in the diffusion equation as the source of a diffusion flux driven by the strain gradient. When the shape of the elastic field in Ge/Si(111) islands is coupled to diffusion, the morphology of the SiGe nanostructures observed after annealing is reproduced. © 2013 IOP Publishing Ltd.

Persichetti, L., Sgarlata, A., Fanfoni, M., Balzarotti, A. (2013). The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy. JOURNAL OF PHYSICS. CONDENSED MATTER, 25(39), 395801 [10.1088/0953-8984/25/39/395801].

The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy

Persichetti L.
;
Balzarotti A.
2013-01-01

Abstract

We investigate the interdependent processes of strain and diffusion in the formation of holes and atolls obtained by rapid annealing of Ge/Si(111) islands at T ≈ 970 °C. We show that the shape evolution from islands to atolls and holes is closely captured by an analytical model including strain-driven diffusion. In the model, strain profiles obtained by finite element solutions of continuum elasticity equations are introduced in the diffusion equation as the source of a diffusion flux driven by the strain gradient. When the shape of the elastic field in Ge/Si(111) islands is coupled to diffusion, the morphology of the SiGe nanostructures observed after annealing is reproduced. © 2013 IOP Publishing Ltd.
2013
Persichetti, L., Sgarlata, A., Fanfoni, M., Balzarotti, A. (2013). The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy. JOURNAL OF PHYSICS. CONDENSED MATTER, 25(39), 395801 [10.1088/0953-8984/25/39/395801].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/354471
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