We present a novel approach to engineer the growth of strained epitaxial films based on tailoring the elastic-interaction potential between nanostructures with substrate vicinality. By modeling the island-island interaction energy surface within continuum elasticity theory, we find that its fourfold symmetry is broken at high miscuts, producing directions of reduced elastic-interaction energy. As a consequence, it is possible to direct the Ge island growth on highly misoriented Si(001) substrates towards desired pathways. © 2011 American Physical Society.
Persichetti, L., Sgarlata, A., Fanfoni, M., Balzarotti, A. (2011). Breaking elastic field symmetry with substrate vicinality. PHYSICAL REVIEW LETTERS, 106(5), 055503 [10.1103/PhysRevLett.106.055503].
Breaking elastic field symmetry with substrate vicinality
Persichetti L.
;Balzarotti A.
2011-01-01
Abstract
We present a novel approach to engineer the growth of strained epitaxial films based on tailoring the elastic-interaction potential between nanostructures with substrate vicinality. By modeling the island-island interaction energy surface within continuum elasticity theory, we find that its fourfold symmetry is broken at high miscuts, producing directions of reduced elastic-interaction energy. As a consequence, it is possible to direct the Ge island growth on highly misoriented Si(001) substrates towards desired pathways. © 2011 American Physical Society.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
